Nonvolatile memory device capable of reducing read disturbance and read method thereof

• US 8,767,468 B2
• Filed: 05/27/2011
• Issued: 07/01/2014
• Est. Priority Date: 06/01/2010
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Jae-il, Sone, Moon
• Primary Examiner(s): Tran, Anthan
• Application Number:
  US13/117,390
• Publication Number:
  US 20110292726A1
• Time in Patent Office: 1,131 Days
• Field of Search: 365/185.03, 365/185.18
• US Class Current: 365/185.18
• CPC Class Codes: G11C 11/26 using discharge tubes
• CPC Class Codes: G11C 11/5628 Programming or writing circuits; Data input circuits
• CPC Class Codes: G11C 16/0483 comprising cells having several storage transistors connected in series
• CPC Class Codes: G11C 16/3418 Disturbance prevention or evaluation; Refreshing of disturbed memory data

Abstract

Provided are a nonvolatile memory device and a read method of the same. The read method applying one of a plurality of unselected read voltages to unselected wordlines adjacent to a selected word line. The voltage applied to the unselected word lines being based on which of a plurality of selected read voltages is applied to the selected wordline.

Claims

1. A read method of a nonvolatile memory device, comprising:

applying one of a plurality of unselected read voltages to unselected wordlines adjacent to a selected wordline based on which one of a plurality of selected read voltages applied to the selected wordline,

wherein the applying one of the plurality of unselected read voltages to the unselected wordlines adjacent to the selected wordline includes,

applying a first unselected read voltage to wordlines adjacent to the selected wordline if a first selected read voltage is applied to the selected wordline;

applying a second unselected read voltage to the wordlines adjacent to the selected wordline if a second selected read voltage is applied to the selected wordline, the second unselected read voltage being a higher voltage than the first unselected read voltage; and

applying the second unselected read voltage to the wordlines adjacent to the selected wordline if a third selected read voltage is applied to the selected wordline,

wherein the third selected read voltage is higher than the second selected read voltage.

2. The read method as set forth in claim 1, further comprising:

applying a third unselected read voltage to unselected wordlines that are not adjacent to the selected wordline, the third unselected read voltage being a lower voltage than the first unselected read voltage.

3. The read method as set forth in claim 1, wherein

the first selected read voltage is a lower voltage than the second selected read voltage.

4. The read method as set forth in claim 1, wherein

at least one of the first to third selected read voltages are used as read voltages to verify a programmed result.

5. A read method of a nonvolatile memory device, comprising:

applying one of first and second unselected read voltages to first unselected wordlines adjacent to a selected wordline based on which one of a plurality of selected read voltages is applied to the selected wordline; and

applying a third unselected read voltage to a second unselected wordline disposed between the first unselected wordline and a base line, wherein

the first unselected read voltage is applied to the first unselected wordlines if the one of the plurality of selected read voltages applied to the selected wordline is a first selected read voltage equal to or lower than a reference voltage, and the second unselected read voltage is applied to the first unselected wordlines if the one of the plurality of selected read voltages applied to the selected wordline is a second selected read voltage, the second unselected read voltage is applied to the first unselected wordlines if the one of the plurality of selected read voltages applied to the selected wordline is a third selected read voltage, the second and third selected read voltages are higher than the reference voltage, the second and third selected read voltages are different from each other, and

the first unselected read voltage is a lower voltage than the second unselected read voltage and the first unselected read voltage is a higher voltage than the third unselected read voltage.

6. The read method as set forth in claim 5, wherein

the plurality of selected read voltages have different magnitudes to determine states of memory cells connected to the selected wordline.

7. The read method as set forth in claim 6, wherein

the memory cells have a plurality of programmed states by storing multi-bit data.

8. The read method as set forth in claim 5, wherein

the plurality of selected read voltages are used as read voltages to verify a programmed result.

9. The read method as set forth in claim 5, further comprising:

applying the third unselected read voltage to the base line.

10. The read method as set forth in claim 5, wherein the base line is one of a ground selection line and a string selection line.

11. The read method as set forth in claim 5, wherein

the nonvolatile memory device is a NAND-type flash memory device.

12. A read method of a non-volatile memory device, the method comprising:

supplying one of a first unselected read voltage and a second unselected read voltage to a first unselected word line that is adjacent to a selected wordline, the voltage of the first unselected read voltage and the second unselected read voltage being different from each other and based on a voltage supplied to the selected wordline;

supplying a third unselected read voltage to a second unselected word line, the second unselected word line being not adjacent to the selected wordline, the third unselected read voltage, and the third unselected read voltage being lower than the first and second unselected read voltages,

wherein the voltage supplied to the selected wordline includes first, second, and third selected read voltages, the first unselected read voltage is supplied to the first unselected word line when the first selected read voltage is supplied to the selected wordline, the second unselected read voltage is applied to the first unselected word line when the second and third selected read voltages is supplied to the selected wordline, the second unselected read voltage is applied to the first unselected word line when the third selected read voltages is supplied to the selected wordline, the first and second unselected read voltages are different from each other, and the third and second selected read voltages are different from each other.

13. The read method of claim 12, wherein the first unselected read voltage is increased if the voltage supplied to the selected wordline is increased.