Substrate-processing apparatus and substrate-processing method for selectively inserting diffusion plates

• US 8,771,418 B2
• Filed: 07/02/2010
• Issued: 07/08/2014
• Est. Priority Date: 07/08/2009
• Status: Active Grant

• Current Assignee: Eugene Technology Co., Ltd.
• Original Assignee: Eugene Technology Co., Ltd.
• Inventors: Je, Sung Tae, Park, Chan Yong, Kim, Kyoung Hun
• Primary Examiner(s): Zervigon, Rudy
• Application Number:
  US13/382,812
• Publication Number:
  US 20120135145A1
• Time in Patent Office: 1,467 Days
• Field of Search: 118/715, 15634533-34534
• US Class Current: 118/715
• CPC Class Codes: C23C 16/45565 Shower nozzles

Abstract

According to one embodiment of the present invention, a substrate-processing apparatus comprises: a lower chamber with an open top; an upper chamber which covers the top of the lower chamber, and which cooperates with the lower chamber to form an internal space for substrate-processing; a shower head arranged in a lower portion of the upper chamber to supply reaction gas to the internal space, and forming a buffer space between the shower head and the upper chamber; a gas supply port formed in the upper chamber to supply reaction gas to the buffer space; and a diffusion unit arranged in the buffer space to diffuse the reaction gas supplied through the gas supply port. The diffusion unit includes: a plurality of diffusion areas which are blocked from each other, in order to enable the reaction gas to be diffused therein; a plurality of diffusion holes for placing the gas supply port and the diffusion areas in communication; and one or more diffusion plates, the shapes of which correspond to the shapes of the diffusion areas, and which are selectively inserted into the respective diffusion areas.

Claims

1. A substrate-processing apparatus comprising:

a lower chamber having an open space on an upper side;

an upper chamber disposed on the upper side of the lower chamber;

an inner space defined by the lower chamber and the upper chamber, in which a process for processing a substrate is performed;

a shower head disposed in a lower portion of the upper chamber and having injection holes to supply a reaction gas toward the inner space;

a buffer space defined by the upper chamber and the shower head therebetween;

a gas supply port formed in the upper chamber to supply the reaction gas into the buffer space;

a diffusion unit disposed in the buffer space to control a flow of the reaction gas supplied through the gas supply port, the diffusion unit including

a block plate having a circular plate shape and spaced from a bottom surface of the upper chamber,

sidewalls disposed on a bottom surface of the block plate and protruding from the bottom surface of the block plate, the sidewalls having a predetermined width and height and supporting the block plate on the shower head,

a plurality of diffusion areas defined by the sidewalls and the block plate in a space between the block plate and the shower head,

a plurality of diffusion holes formed in the block plate corresponding to all of the plurality of diffusion areas, and allowing all of the plurality of diffusion areas to communicate with the gas supply port; and

a plurality of diffusion plates separated from the block plate and having connection holes, each of the diffusion plates having a same shape as a corresponding one to of the diffusion areas, at least one of the diffusion plates being selectively and detachably inserted into the diffusion areas.

2. The substrate-processing apparatus of claim 1, wherein the diffusion areas comprise:

a central area located in a central area of the block plate and having a circular shape;

a plurality of first areas surrounding the central area; and

a plurality of second areas surrounding the first areas collectively.

3. The substrate-processing apparatus of claim 1, further comprising a support plate disposed under the shower head to place the substrate thereon,

wherein the one or more diffusion plates are respectively inserted into the diffusion areas according to process rates of the corresponding substrate areas.

4. The substrate-processing apparatus of claim 1, wherein one or more diffusion plates are stacked in a diffusion area.

9. The substrate-processing apparatus of claim 1, wherein the sidewalls include

a plurality of circular sidewalls arranged in concentric circles on a same level, and

a plurality of radial sidewalls having a straight line shape and arranged radially between neighboring circular sidewalls.

10. The substrate-processing apparatus of claim 2, wherein a number of diffusion plates inserted into the first diffusion area is different from a number of diffusion plates inserted into the second diffusion area.

5. A substrate-processing apparatus comprising:

a chamber defining an inner space in which a process for processing a substrate is performed; and

a shower head disposed in the inner space of the chamber and having injection holes to diffuse a reaction gas;

a buffer space defined by an upper portion of the chamber and the shower head in the inner space of the chamber;

a diffusion unit disposed in the buffer space to diffuse the reaction gas from a gas supply port, the diffusion unit including

a plurality of circular sidewalls having a loop shape and arranged in concentric circles on a same level,

a plurality of radial sidewalls having a straight line shape and arranged radially between neighboring circular sidewalls, the plurality of circular sidewalls and radial sidewalls having a predetermined width and height,

a plurality of diffusion areas in which the reaction gas is diffused, the plurality of diffusion areas being defined by the plurality of circular sidewalls and radial sidewalls, and

a plurality of diffusion plates having connection holes and separated from the circular sidewalls and radial sidewalls, each of the diffusion plates having a same shape as a corresponding one of the diffusion areas, at least one of the diffusion plates being selectively and detachably inserted into the diffusion areas.

6. The substrate-processing apparatus of claim 5, further comprising a support plate on which the substrate is placed thereon,

wherein the one or more diffusion plates are respectively inserted into the diffusion areas according to process rates of the corresponding substrate areas.

7. The substrate-processing apparatus of claim 5, wherein one or more diffusion plates are stacked in a diffusion area.

8. The substrate-processing apparatus of claim 5, wherein the diffusion areas are disposed substantially parallel to the substrate.

11. The substrate-processing apparatus of claim 5, wherein the diffusion areas comprise:

a central area located in a central area of the diffusion areas;

a plurality of first areas surrounding the central area collectively; and

a plurality of second areas surrounding the first areas collectively, and

wherein a number of diffusion plates inserted into the first diffusion area is different from a number of diffusion plates inserted into the second diffusion area.