Method of manufacturing integrated circuit devices

• US 8,771,427 B2
• Filed: 09/04/2012
• Issued: 07/08/2014
• Est. Priority Date: 09/30/1996
• Status: Expired due to Fees

• Current Assignee: Akrion Incorporated
• Original Assignee: Akrion Incorporated
• Inventors: Bran, Mario E.
• Primary Examiner(s): Barr, Michael
• Assistant Examiner(s): DUNLAP, CAITLIN NOELLE DENNI
• Application Number:
  US13/603,082
• Publication Number:
  US 20130233342A1
• Time in Patent Office: 672 Days
• Field of Search: 134/1, 134/1.3
• US Class Current: 134/1.3
• CPC Class Codes: B06B 3/00 Methods or apparatus specially adapted for transmitting mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
• CPC Class Codes: B08B 17/02 Preventing deposition of fouling or of dust
• CPC Class Codes: B08B 3/12 by sonic or ultrasonic vibrations washing or rinsing machines for crockery or tableware using sonic or ultrasonic waves A47L15/13; of natural teeth, of prostheses using ultrasonic techniques similar to those used for natural teeth A61C17/20; application of ultrasonic vibrations to chemical, physical or physico-chemical processes in general B01J19/10
• CPC Class Codes: H01L 21/02041 Cleaning
• CPC Class Codes: H01L 21/67051 using mainly spraying means, e.g. nozzles
• CPC Class Codes: H01L 21/67057 with the semiconductor substrates being dipped in baths or vessels
• CPC Class Codes: Y10S 134/902 Semiconductor wafer

Abstract

A method for manufacturing integrated circuit devices. In one aspect, the invention may be a method of manufacturing integrated circuit devices comprising: supporting a semiconductor wafer in a substantially horizontal orientation; providing a transducer assembly comprising a probe having a forward portion, a rear portion and no more than one piezoelectric transducer element coupled to the rear portion; supporting the transducer assembly so that the forward portion is adjacent but spaced from a first surface of the semiconductor wafer; rotating the semiconductor wafer; applying a fluid to the first surface of the semiconductor wafer to form a film of the fluid between a portion of the forward portion and the first surface of the semiconductor wafer; and transmitting acoustical energy generated by the piezoelectric transducer element into the film of the fluid via the forward portion, the acoustical energy loosening particles from the first surface of the semiconductor wafer.

Claims

1. A method of manufacturing integrated circuit devices comprising:

supporting a semiconductor wafer in a substantially horizontal orientation;

providing a transducer assembly comprising a probe having a forward portion, and a rear portion and no more than one piezoelectric transducer element coupled to the rear portion of the probe;

supporting the transducer assembly so that the forward portion of the probe is adjacent to but spaced from a first surface of the semiconductor wafer;

rotating the semiconductor wafer;

applying a fluid to the first surface of the semiconductor wafer so as to form a film of the fluid between at least a portion of the forward portion and the first surface of the semiconductor wafer; and

transmitting acoustical energy that is generated by the no more than one piezoelectric transducer element into the film of the fluid via the forward portion, the acoustical energy loosening particles from the first surface of the semiconductor wafer.

2. The method of claim 1 wherein the forward portion is a cylindrical rod.

3. The method of claim 1 wherein the rear portion has a cross-section that is greater than a cross-section of the forward portion.

4. The method of claim 3 wherein the acoustical energy that is generated by the transducer is focused as it is transmitted through the probe from the rear portion to the forward portion.

5. The method of claim 1 wherein the semiconductor wafer is supported in a gaseous atmosphere when the acoustical energy is transmitted to the film of the fluid.

6. The method of claim 1 wherein the fluid is applied to the first surface of the semiconductor wafer by a nozzle.

7. The method of claim 1 wherein the acoustical energy is megasonic energy.