Formed body, production method thereof, electronic device member and electronic device
First Claim
1. A formed article sequentially comprising a base layer, a primer layer that includes a hydroxyl group-containing polymer, and a gas barrier layer, the gas barrier layer being formed of a material that includes at least an oxygen atom and a silicon atom, a surface layer part of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on a total content rate of oxygen atoms, nitrogen atoms, and silicon atoms, and the surface layer part of the gas barrier layer having a film density of 2.4 to 4.0 g/cm3.
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Abstract
The present invention is a formed article sequentially comprising a base layer, a primer layer that includes a hydroxyl group-containing polymer, and a gas barrier layer, the gas barrier layer being formed of a material that includes at least an oxygen atom and a silicon atom, a surface layer part of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on a total content rate of oxygen atoms, nitrogen atoms, and silicon atoms, and the surface layer part of the gas barrier layer having a film density of 2.4 to 4.0 g/cm3. According to the present invention, provided is a formed article, a method for producing the same, an electronic device member including the formed article, and an electronic device including the electronic device member, with an excellent gas barrier capability and excellent transparency.
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Citations
19 Claims
- 1. A formed article sequentially comprising a base layer, a primer layer that includes a hydroxyl group-containing polymer, and a gas barrier layer, the gas barrier layer being formed of a material that includes at least an oxygen atom and a silicon atom, a surface layer part of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on a total content rate of oxygen atoms, nitrogen atoms, and silicon atoms, and the surface layer part of the gas barrier layer having a film density of 2.4 to 4.0 g/cm3.
Specification