Method for manufacturing semiconductor device
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming a gate electrode layer;
forming a gate insulating film over the gate electrode layer;
removing water or hydrogen from the gate insulating film by performing a first heat treatment on the gate insulating film;
supplying oxygen to the gate insulating film by performing a first oxygen doping treatment on the gate insulating film after performing the first heat treatment;
forming an oxide semiconductor film over a region of the gate insulating film, which overlaps with the gate electrode layer; and
forming a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor film.
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Abstract
A highly reliable semiconductor device that includes a transistor including an oxide semiconductor is provided. In a manufacturing process of a semiconductor device that includes a bottom-gate transistor including an oxide semiconductor, an insulating film which is in contact with an oxide semiconductor film is subjected to dehydration or dehydrogenation treatment by heat treatment and oxygen doping treatment in this order. The insulating film which is in contact with the oxide semiconductor film refers to a gate insulating film provided under the oxide semiconductor film and an insulating film which is provided over the oxide semiconductor film and functions as a protective insulating film. The gate insulating film and/or the insulating film are/is subjected to dehydration or dehydrogenation treatment by heat treatment and oxygen doping treatment in this order.
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Citations
20 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer; forming a gate insulating film over the gate electrode layer; removing water or hydrogen from the gate insulating film by performing a first heat treatment on the gate insulating film; supplying oxygen to the gate insulating film by performing a first oxygen doping treatment on the gate insulating film after performing the first heat treatment; forming an oxide semiconductor film over a region of the gate insulating film, which overlaps with the gate electrode layer; and forming a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer; forming a gate insulating film over the gate electrode layer; forming an oxide semiconductor film over a region of the gate insulating film, which overlaps with the gate electrode layer; forming a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor film; forming an insulating film over the oxide semiconductor film, the source electrode layer, and the drain electrode layer and in contact with the oxide semiconductor film; removing water or hydrogen from the insulating film by performing a first heat treatment on the insulating film; and supplying oxygen to the insulating film by performing a first oxygen doping treatment on the insulating film after performing the first heat treatment. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer; forming a gate insulating film over the gate electrode layer; removing water or hydrogen from the gate insulating film by performing a first heat treatment on the gate insulating film; supplying oxygen to the gate insulating film by performing a first oxygen doping treatment on the gate insulating film after performing the first heat treatment; forming an oxide semiconductor film over a region of the gate insulating film, which overlaps with the gate electrode layer; forming a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor film; forming an insulating film in contact with the oxide semiconductor film and over the oxide semiconductor film, the source electrode layer, and the drain electrode layer; removing water or hydrogen from the insulating film by performing a second heat treatment on the insulating film; and supplying oxygen to the insulating film by performing a second oxygen doping treatment on the insulating film after performing the second heat treatment. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamade, Naoto, Koezuka, Junichi, Yamazaki, Shunpei
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Primary Examiner(s)Malsawma, Lex
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Application NumberUS13/681,895Publication NumberTime in Patent Office595 DaysField of Search438/530US Class Current438/158CPC Class CodesH01L 29/66477 with an insulated gate, i.e...H01L 29/66969 of devices having semicondu...H01L 29/7869 having a semiconductor body...
