Apparatus and method for forming semiconductor contacts
First Claim
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1. A method comprising:
- forming a germanium fin structure over a silicon substrate, wherein the germanium fin structure comprises;
a channel connected between a first drain/source region and a second drain/source region;
depositing an N+ amorphous silicon layer over the first drain/source region and the second drain/source region at a first temperature, wherein the first temperature is lower than a melting point of the germanium fin structure; and
performing a solid phase epitaxial regrowth process on the amorphous silicon layer at a second temperature, wherein the second temperature is lower than the melting point of the germanium fin structure.
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Abstract
A method for forming semiconductor contacts comprises forming a germanium fin structure over a silicon substrate, depositing a doped amorphous silicon layer over the first drain/source region and the second drain/source region at a first temperature, wherein the first temperature is lower than a melting point of the germanium fin structure and performing a solid phase epitaxial regrowth process on the amorphous silicon layer at a second temperature, wherein the second temperature is lower than the melting point of the germanium fin structure.
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Citations
12 Claims
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1. A method comprising:
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forming a germanium fin structure over a silicon substrate, wherein the germanium fin structure comprises; a channel connected between a first drain/source region and a second drain/source region; depositing an N+ amorphous silicon layer over the first drain/source region and the second drain/source region at a first temperature, wherein the first temperature is lower than a melting point of the germanium fin structure; and performing a solid phase epitaxial regrowth process on the amorphous silicon layer at a second temperature, wherein the second temperature is lower than the melting point of the germanium fin structure. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method comprising:
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forming a germanium fin over a silicon substrate, wherein the germanium fin comprises; a first drain/source region; a second drain/source region; and a channel coupled between the first drain/source region and the second drain/source region; forming a gate structure over the channel, wherein the gate structure comprises; a gate dielectric layer; and a gate electrode layer formed over the gate dielectric layer; depositing a first amorphous silicon layer over the first drain/source region at a first temperature; depositing a second amorphous silicon layer over the second drain/source region at a second temperature; and performing a solid phase epitaxial regrowth process on the first amorphous silicon layer and the second amorphous silicon layer at a third temperature. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification