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Semiconductor device and method for manufacturing the same

  • US 8,772,127 B2
  • Filed: 01/27/2011
  • Issued: 07/08/2014
  • Est. Priority Date: 12/29/2010
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising:

  • providing a silicon substrate having {100} crystal indices with a gate stack structure formed thereon;

    forming a second isolation region within the silicon substrate wherein the second isolation region comprises a second dielectric layer;

    forming an interlayer dielectric layer to cover a top surface of the silicon substrate;

    forming a first trench in the interlayer dielectric layer and/or in the gate stack structure above the second isolation region, and the second dielectric layer is exposed at a bottom of the first trench, wherein the first trench has an extension direction being along <

    110>

    crystal direction and perpendicular to that of the gate stack structure; and

    filling the first trench with a first dielectric layer, wherein the first dielectric layer is a tensile-stressed dielectric layer.

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