Methods of fabricating interconnect structures containing various capping materials for electrical fuse and other related applications
First Claim
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1. A method comprising:
- forming a first interconnect structure having a first interfacial structure connecting to a first underlying interconnect material; and
forming a second interconnect structure having a second interfacial structure different from the first interfacial structure and connecting to a second underlying interconnect material, wherein;
the first interconnect structure and second interconnect structure are different structures, andthe first interfacial structure is formed with a metal layer and a capping layer and the second interfacial structure is formed with a metal layer in a same process as the metal layer of the first interfacial structure and a capping layer comprising different material than the capping layer of the first interfacial structure.
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Abstract
Methods are provided for fabricating interconnect structures containing various capping materials for electrical fuses and other related applications. The method includes forming a first interconnect structure having a first interfacial structure and forming a second interconnect structure adjacent to the first structure. The second interconnect structure is formed with a second interfacial structure different from the first interfacial structure of the first interconnect structure.
93 Citations
21 Claims
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1. A method comprising:
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forming a first interconnect structure having a first interfacial structure connecting to a first underlying interconnect material; and forming a second interconnect structure having a second interfacial structure different from the first interfacial structure and connecting to a second underlying interconnect material, wherein; the first interconnect structure and second interconnect structure are different structures, and the first interfacial structure is formed with a metal layer and a capping layer and the second interfacial structure is formed with a metal layer in a same process as the metal layer of the first interfacial structure and a capping layer comprising different material than the capping layer of the first interfacial structure. - View Dependent Claims (2, 3, 4)
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5. A method comprising:
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forming a first interconnect structure having a first interfacial structure; and forming a second interconnect structure having a second interfacial structure different from the first interfacial structure, wherein the first interconnect structure is a wiring interconnect structure and the second interconnect structure is an e-fuse, and wherein the first interfacial structure is formed with a metal layer and a capping layer comprising SiN and the second interfacial structure is formed with a metal layer in a same process as the metal layer of the first interfacial structure and a capping layer comprising one of;
Co(W,P,B), Ru, Ir, Rh and Pt.
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6. A method comprising:
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forming a first interconnect structure having a first interfacial structure; and forming a second interconnect structure having a second interfacial structure different from the first interfacial structure, wherein the first interconnect structure is a wiring interconnect structure and the second interconnect structure is an e-fuse, and wherein the first interfacial structure is formed with a same material as the second interfacial structure and further comprising degrading interfacial properties between a metal layer and capping layer of the second interfacial structure. - View Dependent Claims (7)
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8. A method comprising:
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forming a first interconnect structure having a first interfacial structure; and forming a second interconnect structure having a second interfacial structure different from the first interfacial structure, wherein the first interconnect structure is a wiring interconnect structure and the second interconnect structure is an e-fuse, and wherein; forming the first interconnect structure and the second interconnect structure includes forming in a same processing flow a first wiring layer in a first dielectric, forming a second wiring layer in a second dielectric, forming an electrical interconnect between the first wring layer and the second wiring layer, and forming a capping layer over the second wiring layer through a deposition process; and forming the second interconnect structure further includes one of; (i) damaging the capping layer or upper second wiring layer on the second interconnect structure in certain areas/macros and (ii) etching away at least portions of the capping layer over the second wiring layer and depositing another capping material over the second wiring layer in certain areas/macros. - View Dependent Claims (9)
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10. A method comprising:
forming a wiring interconnect structure and an electronic fuse interconnect structure by a same process flow which comprises; depositing a first wiring layer in a trench of a first dielectric; depositing a second wiring layer in a trench in a second dielectric; forming an interconnection which electrically connects the first wiring layer and the second wiring layer; and depositing a capping material over the second wiring layer, and wherein one of the capping material and the second wiring layer of the electronic fuse interconnect structure undergoes a process which changes its interfacial properties while protecting the capping material over the wiring interconnect structure. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A method comprising:
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forming a first macro having a metal wiring layer on a first level electrically connected to a metal wiring layer on a second layer and a capping layer over the metal wiring layer on the second layer which has a first electromigration (EM) resistance; and forming a second macro adjacent the first macro, the second macro being formed with a metal wiring layer on the first level electrically connected to a metal wiring layer on the second layer with a same process flow of the first macro, and additionally forming a capping layer over the metal wiring layer on the second layer which has a second electromigration (EM) resistance different from the first electromigration (EM) resistance. - View Dependent Claims (17, 18)
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19. A method of forming an interconnect structure comprising:
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forming a first macro having a first e-fuse programmability comprising an upper wiring layer capped by a capping material; and forming a second macro having a second e-fuse programmability comprising an upper wiring layer formed in the same processing step as the first macro and capping the second macro having interfacial properties different than that of the first macro. - View Dependent Claims (20, 21)
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Specification