Method for manufacturing semiconductor element and deposition apparatus
First Claim
Patent Images
1. A method for manufacturing a semiconductor element comprising the steps of:
- transferring a substrate into a load lock chamber;
evacuating the load lock chamber to have a pressure of 10−
6 Pa or less;
transferring the substrate into a heating chamber evacuated to have a pressure of 10−
8 Pa or less;
performing a heat treatment on the substrate after evacuating the heating chamber to have the pressure of 10−
8 Pa or less;
transferring the substrate into a first deposition chamber evacuated to have a pressure of 10−
8 Pa or less;
introducing a first gas into the first deposition chamber;
forming a gate insulating film over the substrate;
evacuating the first deposition chamber to have a pressure of 10−
8 Pa or less;
transferring the substrate into a second deposition chamber evacuated to have a pressure of 10−
8 Pa or less;
introducing a second gas into the second deposition chamber;
forming an oxide semiconductor film over the gate insulating film; and
evacuating the second deposition chamber to have a pressure of 10−
8 Pa or less after forming the oxide semiconductor film.
1 Assignment
0 Petitions
Accused Products
Abstract
An object of the present invention is to provide an apparatus for successive deposition used for manufacturing a semiconductor element including an oxide semiconductor in which impurities are not included. By using the deposition apparatus capable of successive deposition of the present invention that keeps its inside in high vacuum state, and thus allows films to be deposited without being exposed to the air, the entry of impurities such as hydrogen into the oxide semiconductor layer and the layer being in contact with the oxide semiconductor layer can be prevented; as a result, a semiconductor element including a high-purity oxide semiconductor layer in which hydrogen concentration is sufficiently reduced can be manufactured. In such a semiconductor element, off-state current is low, and a semiconductor device with low power consumption can be realized.
-
Citations
12 Claims
-
1. A method for manufacturing a semiconductor element comprising the steps of:
-
transferring a substrate into a load lock chamber; evacuating the load lock chamber to have a pressure of 10−
6 Pa or less;transferring the substrate into a heating chamber evacuated to have a pressure of 10−
8 Pa or less;performing a heat treatment on the substrate after evacuating the heating chamber to have the pressure of 10−
8 Pa or less;transferring the substrate into a first deposition chamber evacuated to have a pressure of 10−
8 Pa or less;introducing a first gas into the first deposition chamber; forming a gate insulating film over the substrate; evacuating the first deposition chamber to have a pressure of 10−
8 Pa or less;transferring the substrate into a second deposition chamber evacuated to have a pressure of 10−
8 Pa or less;introducing a second gas into the second deposition chamber; forming an oxide semiconductor film over the gate insulating film; and evacuating the second deposition chamber to have a pressure of 10−
8 Pa or less after forming the oxide semiconductor film. - View Dependent Claims (2, 3, 4)
-
-
5. A method for manufacturing a semiconductor element comprising the steps of:
-
transferring a substrate into a load lock chamber; evacuating the load lock chamber to have a pressure of 10−
6 Pa or less;transferring the substrate into a heating chamber evacuated to have a pressure of 10−
8 Pa or less;performing a heat treatment on the substrate after evacuating the heating chamber to have the pressure of 10−
8 Pa or less;transferring the substrate into a first deposition chamber evacuated to have a pressure of 10−
8 Pa or less;introducing a first gas into the first deposition chamber; forming an oxide semiconductor film over the substrate; evacuating the first deposition chamber to have a pressure of 10−
8 Pa or less after forming the oxide semiconductor film;transferring the substrate into a second deposition chamber evacuated to have a pressure of 10−
8 Pa or less;introducing a second gas into the second deposition chamber; and forming a conductive film over the oxide semiconductor film. - View Dependent Claims (6, 7, 8)
-
-
9. A method for manufacturing a semiconductor element comprising the steps of:
-
transferring a substrate into a load lock chamber; evacuating the load lock chamber to have a pressure of 10−
6 Pa or less;transferring the substrate into a heating chamber evacuated to have a pressure of 10−
8 Pa or less;performing a heat treatment on the substrate after evacuating the heating chamber to have the pressure of 10−
8 Pa or less;transferring the substrate into a first deposition chamber evacuated to have a pressure of 10−
8 Pa or less;introducing a first gas into the first deposition chamber; forming a gate insulating film over the substrate; evacuating the first deposition chamber to have a pressure of 10−
8 Pa or less;transferring the substrate into a second deposition chamber evacuated to have a pressure of 10−
8 Pa or less;introducing a second gas into the second deposition chamber; forming an oxide semiconductor film over the gate insulating film; evacuating the second deposition chamber to have a pressure of 10−
8 Pa or less after forming the oxide semiconductor film;transferring the substrate into a third deposition chamber evacuated to have a pressure of 10−
8 Pa or less;introducing a third gas into the third deposition chamber; and forming a conductive film over the oxide semiconductor film. - View Dependent Claims (10, 11, 12)
-
Specification
-
- Resources
Litigation Campaign Assessment
Thank you for your request. You will receive a custom alert email when the Litigation Campaign Assessment is available.
×
-
Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
InventorsYamazaki, Shunpei, Takase, Natsuko
-
Primary Examiner(s)Ahmadi, Mohsen
-
Application NumberUS13/029,169Publication NumberTime in Patent Office1,237 DaysField of Search257/E21.3, 257/E21.499US Class Current438/660CPC Class CodesC23C 14/08 Oxides C23C14/10 takes prec...C23C 14/3457 using other particles than ...C23C 14/566 using a load-lock chamberC23C 16/4408 by purging residual gases f...C23C 16/4412 Details relating to the exh...H01J 37/34 operating with cathodic spu...H01L 21/02554 OxidesH01L 21/02565 Oxide semiconducting materi...H01L 21/02631 Physical deposition at redu...H01L 21/67167 surrounding a central trans...H01L 21/67207 comprising a chamber adapte...H01L 29/4908 for thin film semiconductor...H01L 29/66969 of devices having semicondu...H01L 29/78606 with supplementary region o...H01L 29/7869 having a semiconductor body...
