Low-bandgap, monolithic, multi-bandgap, optoelectronic devices
First Claim
1. A monolithic, multi-bandgap, photovoltaic converter, comprising:
- a first subcell comprising GaInAs(P) with a first bandgap and a first lattice constant;
a second subcell comprising GaInAs(P) with a second bandgap and a second lattice constant, wherein the second bandgap is less than the first bandgap and the second lattice constant is greater than the first lattice constant, and further, wherein the second lattice constant is equal to a lattice constant of a InAsyP1-y alloy with a bandgap greater than the first bandgap; and
a lattice constant transition material positioned between the first subcell and the second subcell, said lattice constant transition material comprising InAsyP1-y alloy with a lattice constant that changes gradually from the first lattice constant to the second lattice constant.
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Accused Products
Abstract
Low bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED'"'"'s, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.
76 Citations
23 Claims
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1. A monolithic, multi-bandgap, photovoltaic converter, comprising:
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a first subcell comprising GaInAs(P) with a first bandgap and a first lattice constant; a second subcell comprising GaInAs(P) with a second bandgap and a second lattice constant, wherein the second bandgap is less than the first bandgap and the second lattice constant is greater than the first lattice constant, and further, wherein the second lattice constant is equal to a lattice constant of a InAsyP1-y alloy with a bandgap greater than the first bandgap; and a lattice constant transition material positioned between the first subcell and the second subcell, said lattice constant transition material comprising InAsyP1-y alloy with a lattice constant that changes gradually from the first lattice constant to the second lattice constant. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A monolithic, multi-bandgap, photovoltaic converter, comprising:
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a InP substrate with a substrate lattice constant; a first subcell comprising GaInAs(P) with a first bandgap and a first lattice constant, wherein the first lattice constant is greater than the substrate lattice constant; a lattice constant transition material positioned between the InP substrate and the first subcell, said lattice constant transition material comprising InAsyP1-y alloy with a lattice constant that changes from the substrate lattice constant to the first lattice constant; and a second subcell comprising GaInAs(P) positioned behind the first subcell, said GaInAs(P) of the second cell having a second bandgap, which is less than the first bandgap, and a second lattice constant. - View Dependent Claims (23)
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Specification