High performance, high bandgap, lattice-mismatched, GaInP solar cells
First Claim
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1. A method of fabricating a high bandgap GaInP photovoltaic converter, comprising:
- providing a crystalline growth structure having a growth surface that has a lattice constant which matches a relaxed lattice constant of a GaInP alloy that has a bandgap greater than that of Ga0.51In0.49P, wherein the crystalline growth structure comprises a graded GaAsP structure with a base surface having a lattice constant matching that of GaAs and where the growth surface comprises a GaAs1-xPx alloy;
growing a front contact layer on the growth surface;
growing a GaInP photovoltaic cell on the front contact layer, the GaInP photovoltaic cell having a relaxed lattice constant matching the lattice constant of the growth surface; and
growing a back contact layer on the GaInP photovoltaic cell.
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Abstract
High performance, high bandgap, lattice-mismatched, photovoltaic cells (10), both transparent and non-transparent to sub-bandgap light, are provided as devices for use alone or in combination with other cells in split spectrum apparatus or other applications.
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Citations
18 Claims
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1. A method of fabricating a high bandgap GaInP photovoltaic converter, comprising:
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providing a crystalline growth structure having a growth surface that has a lattice constant which matches a relaxed lattice constant of a GaInP alloy that has a bandgap greater than that of Ga0.51In0.49P, wherein the crystalline growth structure comprises a graded GaAsP structure with a base surface having a lattice constant matching that of GaAs and where the growth surface comprises a GaAs1-xPx alloy; growing a front contact layer on the growth surface; growing a GaInP photovoltaic cell on the front contact layer, the GaInP photovoltaic cell having a relaxed lattice constant matching the lattice constant of the growth surface; and growing a back contact layer on the GaInP photovoltaic cell. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification