Semiconductor light-emitting device and method for fabricating the same
First Claim
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1. A semiconductor light-emitting device, comprising:
- an electrode layer;
a light-emitting structure, the light-emitting structure comprising a plurality of semiconductor layers wherein an uppermost layer of the plurality of semiconductor layers comprises a N type semiconductor layer;
a channel layer along an edge of the electrode layer and having a top surface and a bottom surface opposite to each other and parallel to each other;
an adhesion layer under the electrode layer; and
an electrode on the light-emitting structure, wherein the electrode comprises;
an ohmic contact layer that directly contacts a top surface of the N-type semiconductor layer;
a first barrier layer on the ohmic contact layer;
a conductive layer comprising copper on the first barrier layer;
a second barrier layer on the conductive layer; and
a bonding layer on the second barrier layer, wherein the top surface of the channel layer is spaced apart from a side surface of the uppermost layer of the plurality of semiconductor layers, and wherein at least a portion of the top surface of the channel layer extends horizontally from a side surface of the light-emitting structure toward a side surface of the adhesion layer.
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Abstract
A semiconductor light-emitting device is provided that may include an electrode layer, a light-emitting structure including a compound semiconductor layer on the electrode layer, and an electrode on the light-emitting structure, wherein the electrode includes an ohmic contact layer that contacts the compound semiconductor layer, a first barrier layer on the ohmic contact layer, a conductive layer including copper on the first barrier layer, a second barrier layer on the conductive layer, and a bonding layer on the second barrier layer.
32 Citations
20 Claims
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1. A semiconductor light-emitting device, comprising:
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an electrode layer; a light-emitting structure, the light-emitting structure comprising a plurality of semiconductor layers wherein an uppermost layer of the plurality of semiconductor layers comprises a N type semiconductor layer; a channel layer along an edge of the electrode layer and having a top surface and a bottom surface opposite to each other and parallel to each other; an adhesion layer under the electrode layer; and an electrode on the light-emitting structure, wherein the electrode comprises; an ohmic contact layer that directly contacts a top surface of the N-type semiconductor layer; a first barrier layer on the ohmic contact layer; a conductive layer comprising copper on the first barrier layer; a second barrier layer on the conductive layer; and a bonding layer on the second barrier layer, wherein the top surface of the channel layer is spaced apart from a side surface of the uppermost layer of the plurality of semiconductor layers, and wherein at least a portion of the top surface of the channel layer extends horizontally from a side surface of the light-emitting structure toward a side surface of the adhesion layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 19, 20)
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13. A semiconductor light-emitting device, comprising:
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an electrode layer; a light-emitting structure above the electrode layer, the light-emitting structure comprising a plurality of semiconductor layers; a channel layer along an edge of the electrode layer and having a top surface and a bottom surface opposite to each other and parallel to each other; an adhesion layer under the electrode layer; and an electrode on the light-emitting structure, wherein the electrode comprises; an ohmic contact layer that contacts a top surface of the plurality of semiconductor layers and comprising a single layer including Ti; a first barrier layer on the ohmic contact layer; a conductive layer comprising copper on the first barrier layer; a second barrier layer on the conductive layer; and a bonding layer on the second barrier layer, wherein an uppermost layer of the plurality of semiconductor layers comprises a N type semiconductor layer, and wherein the ohmic contact layer directly contacts a surface of the N type semiconductor layer thereof, and wherein at least a portion of the top surface of the channel layer extends horizontally from a side surface of the light-emitting structure toward a side surface of the adhesion layer.
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14. A semiconductor light-emitting device, comprising:
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an electrode layer; a light-emitting structure above the electrode layer, the light-emitting structure comprising a plurality of semiconductor layers; an electrode on the light-emitting structure, wherein the electrode comprises; an ohmic contact layer that contacts a top surface of the plurality of semiconductor layers; a first barrier layer on the ohmic contact layer; a conductive layer comprising copper on the first barrier layer; a second barrier layer on the conductive layer; and a bonding layer on the second barrier layer, an adhesion layer under the electrode layer; an ohmic layer between the electrode layer and the plurality of semiconductor layers; a channel layer along a bottom edge of the plurality of semiconductor layers; and a current blocking layer between the ohmic layer and the plurality of semiconductor layers, wherein the current blocking layer is formed of a non-metal material having an electrical conductivity lower than the ohmic layer. - View Dependent Claims (15, 16, 17, 18)
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Specification