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Semiconductor light-emitting device and method for fabricating the same

  • US 8,772,803 B2
  • Filed: 06/08/2010
  • Issued: 07/08/2014
  • Est. Priority Date: 10/15/2009
  • Status: Active Grant
First Claim
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1. A semiconductor light-emitting device, comprising:

  • an electrode layer;

    a light-emitting structure, the light-emitting structure comprising a plurality of semiconductor layers wherein an uppermost layer of the plurality of semiconductor layers comprises a N type semiconductor layer;

    a channel layer along an edge of the electrode layer and having a top surface and a bottom surface opposite to each other and parallel to each other;

    an adhesion layer under the electrode layer; and

    an electrode on the light-emitting structure, wherein the electrode comprises;

    an ohmic contact layer that directly contacts a top surface of the N-type semiconductor layer;

    a first barrier layer on the ohmic contact layer;

    a conductive layer comprising copper on the first barrier layer;

    a second barrier layer on the conductive layer; and

    a bonding layer on the second barrier layer, wherein the top surface of the channel layer is spaced apart from a side surface of the uppermost layer of the plurality of semiconductor layers, and wherein at least a portion of the top surface of the channel layer extends horizontally from a side surface of the light-emitting structure toward a side surface of the adhesion layer.

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