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Semiconductor memory device

  • US 8,772,849 B2
  • Filed: 03/02/2012
  • Issued: 07/08/2014
  • Est. Priority Date: 03/10/2011
  • Status: Expired due to Fees
First Claim
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1. A semiconductor memory device comprising:

  • a semiconductor layer;

    a first gate insulating layer over the semiconductor layer;

    an insulating layer over the first gate insulating layer;

    a first gate electrode over the semiconductor layer with the first gate insulating layer interposed therebetween, wherein the first gate electrode is provided in the insulating layer;

    a conductive layer provided in the insulating layer;

    an oxide semiconductor layer in contact with the first gate electrode, the conductive layer, and side surfaces of a groove portion in the insulating layer;

    a second gate insulating layer covering the oxide semiconductor layer; and

    a second gate electrode provided over the oxide semiconductor layer with the second gate insulating layer interposed therebetween.

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