Vertical channel memory and manufacturing method thereof and operating method using the same
First Claim
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1. A memory device, comprising:
- a substrate including a plurality of ridge shaped semiconductor protrusions, a plurality of channels in the plurality of ridge shaped semiconductor protrusions, wherein the ridge shaped semiconductor protrusions have top surfaces and the channels have two vertical surfaces on the corresponding ridge shaped semiconductor protrusions;
a BE-SONOS multi-layer structure disposed over the plurality of ridge shaped semiconductor protrusions including on the top surfaces and the two vertical surfaces of the channels in the plurality of channels and over the substrate between the plurality of ridge shaped semiconductor protrusions, the multi-layer structure including a first barrier layer on the channel, a tunneling layer, a second barrier layer, a dielectric charge trapping layer storing data with one of at least a programmed state and an erased state, and a third barrier layer stacked sequentially; and
a plurality of gates over the multi-layer structure and positioned above the two vertical surfaces of the channels.
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Abstract
A vertical channel memory including a substrate, a channel, a multi-layer structure, a gate, a first terminal and a second terminal is provided. The channel protrudes from the substrate and has a top surface and two vertical surfaces. The multi-layer structure is disposed on the two vertical surfaces of the channel. The gate straddling multi-layer structure is positioned above the two vertical surfaces of the channel. The first terminal and the second terminal are respectively positioned at two sides of the channel opposing to the gate.
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Citations
20 Claims
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1. A memory device, comprising:
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a substrate including a plurality of ridge shaped semiconductor protrusions, a plurality of channels in the plurality of ridge shaped semiconductor protrusions, wherein the ridge shaped semiconductor protrusions have top surfaces and the channels have two vertical surfaces on the corresponding ridge shaped semiconductor protrusions; a BE-SONOS multi-layer structure disposed over the plurality of ridge shaped semiconductor protrusions including on the top surfaces and the two vertical surfaces of the channels in the plurality of channels and over the substrate between the plurality of ridge shaped semiconductor protrusions, the multi-layer structure including a first barrier layer on the channel, a tunneling layer, a second barrier layer, a dielectric charge trapping layer storing data with one of at least a programmed state and an erased state, and a third barrier layer stacked sequentially; and a plurality of gates over the multi-layer structure and positioned above the two vertical surfaces of the channels. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A memory device, comprising:
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a substrate including a plurality of ridge shaped semiconductor protrusions, a plurality of channels in the plurality of ridge shaped semiconductor protrusions, wherein the ridge shaped semiconductor protrusions have top surfaces and the channels have two vertical surfaces on the corresponding ridge shaped semiconductor protrusions; a multi-layer structure disposed over the plurality of ridge shaped semiconductor protrusions including on the top surfaces and the two vertical surfaces of the channels in the plurality of channels and over the substrate between the plurality of ridge shaped semiconductor protrusions, the multi-layer structure including a first barrier layer on the channel, a tunneling layer having a thickness of less than 20 Å and
being unable to store data with one of at least a programmed state and an erased state, a second barrier layer, a dielectric charge trapping layer and a third barrier layer stacked sequentially; anda plurality of gates over the multi-layer structure and positioned above the two vertical surfaces of the channels.
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Specification