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Laser diode

  • US 8,774,245 B2
  • Filed: 09/30/2010
  • Issued: 07/08/2014
  • Est. Priority Date: 10/29/2009
  • Status: Active Grant
First Claim
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1. A vertical cavity surface emitting laser diode comprising:

  • an N-type inclined GaN substrate in the vertical cavity surface emitting laser diode, said N-type inclined GaN substrate having an off-angle larger than 0 degrees in the direction of [1-100] from (0001) C plane;

    a layer of N-type Alx1Ga1-x1N (0<

    x1<

    1) between said N-type inclined GaN substrate and a layer of N-type Alx2Ga2-x2N (0≦

    x2<

    x1), said layer of N-type Alx1Ga1-x1N (0<

    x1<

    1) touching said N-type inclined GaN substrate and said layer of N-type Alx2Ga2-x2N (0≦

    x2<

    x1);

    an insulating layer between an active layer and a layer of P-type Alx6Ga1-x6N (0≦

    x6<

    1), said insulating layer touching said active layer and said layer of P-type Alx6Ga1-x6N (0≦

    x6<

    1);

    an insulating layer aperture extending through said insulating layer, a portion of the layer of P-type Alx6Ga1-x6N (0≦

    x6<

    1) within said insulating layer aperture touching said active layer;

    a layer of N-type Alx3Ga1-x3N (0≦

    x3<

    1) between said active layer and said layer of N-type Alx2Ga2-x2N (0≦

    x2<

    x1), said active layer touching said layer of N-type Alx3Ga1-x3N (0≦

    x3<

    1) and said insulating layer,wherein said layer of N-type Alx1Ga1-x1N (0<

    x1<

    1) and said layer of N-type Alx2Ga2-x2N (0≦

    x2<

    x1) are in a lower DBR layer, light from said active layer being reflectible from said lower DBR layer and emissible through said insulating layer aperture.

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