Semiconductor light sources including selective diffusion for optical and electrical confinement
First Claim
1. A semiconductor vertical resonant cavity light source, comprising:
- an upper mirror and a lower mirror that define a vertical resonant cavity;
a first active region within said vertical resonant cavity for light generation between said upper mirror and said lower mirror;
said vertical resonant cavity including an inner mode confinement region and an outer current blocking region;
a depleted heterojunction current blocking region (DHCBR) within said outer current blocking region of at least one of said upper minor, said lower minor, and said first active region, anda conducting channel within said inner mode confinement region that physically contacts and is framed by said DHCBR, wherein said DHCBR forces current flow into said conducting channel during operation of said vertical light source.
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Abstract
A semiconductor vertical resonant cavity light source includes an upper mirror and a lower minor that define a vertical resonant cavity. A first active region is within the vertical resonant cavity for light generation between the upper minor and lower mirror. The vertical resonant cavity includes an inner mode confinement region and an outer current blocking region. A depleted heterojunction current blocking region (DHCBR) is within the outer current blocking region of at least one of the upper minor, lower minor, and first active region. A conducting channel within the inner mode confinement region is framed by the DHCBR. The DHCBR forces current flow into the conducting channel during operation of the light source.
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Citations
8 Claims
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1. A semiconductor vertical resonant cavity light source, comprising:
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an upper mirror and a lower mirror that define a vertical resonant cavity; a first active region within said vertical resonant cavity for light generation between said upper mirror and said lower mirror; said vertical resonant cavity including an inner mode confinement region and an outer current blocking region; a depleted heterojunction current blocking region (DHCBR) within said outer current blocking region of at least one of said upper minor, said lower minor, and said first active region, and a conducting channel within said inner mode confinement region that physically contacts and is framed by said DHCBR, wherein said DHCBR forces current flow into said conducting channel during operation of said vertical light source. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification