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Correcting for overexposure due to overlapping exposures in lithography

  • US 8,775,981 B1
  • Filed: 02/19/2013
  • Issued: 07/08/2014
  • Est. Priority Date: 02/19/2013
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • receiving a layout file for a reticle used to pattern a first die location in a computing apparatus, the layout file defining a plurality of kerf features;

    defining a flare map calculation area for the first die location covering at least a portion of a kerf region surrounding the first die location in the computing apparatus;

    copying features in the layout file into the region corresponding to the flare map calculation area that are associated with the patterning of die locations neighboring the first die location in the computing apparatus to generate a modified layout file; and

    calculating a flare map of the portion of the kerf region included in the flare map calculation area based on the modified layout file in the computing apparatus, wherein the flare map calculation area covers a first vertical kerf region and a first horizontal kerf region, and copying the features in the layout file further comprises;

    copying kerf features from a second vertical kerf region opposing the first vertical kerf region to the first vertical kerf region; and

    copying kerf features from a second horizontal kerf region opposing the first horizontal kerf region to the first horizontal kerf region.

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