Method for preparing thin GaN layers by implantation and recycling of a starting substrate

• US 8,778,775 B2
• Filed: 12/18/2007
• Issued: 07/15/2014
• Est. Priority Date: 12/19/2006
• Status: Active Grant

• Current Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Original Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Inventors: Tauzin, Aurlie, Madeira, Florence, Dechamp, Jrme, Mazen, Frdric
• Primary Examiner(s): CHOI, CALVIN Y
• Application Number:
  US12/518,198
• Publication Number:
  US 20100025228A1
• Time in Patent Office: 2,401 Days
• Field of Search: 438/458
• US Class Current: 438/458
• CPC Class Codes: H01L 21/02032 by reclaiming or re-processing
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Abstract

A method for preparing a thin layer of GaN from a starting substrate in which at least one thick surface area extending along a free face of the starting substrate includes GaN, where the method includes bombarding the free face of the substrate with helium and hydrogen atoms, the helium being implanted first into the thickness of the thick surface area and the hydrogen being implanted thereafter, and where the helium and hydrogen doses each vary between 1.1017 atoms/cm2 and 4.1017 atoms/cm2. The starting substrate is subjected to a rupture process in order to induce the separation, relative to a residue of the starting substrate, of the entire portion of the thick area located between the free face and the helium and hydrogen implantation depth. The helium is advantageously implanted in a dose at least equal to that of hydrogen, and can also be implanted alone.

Claims

1. A method of fabrication of a thin layer of GaN from a starting substrate of which at least a thick surface area along a free face of the starting substrate comprises GaN, the method comprising the following steps:

bombarding the free face of the starting substrate with helium ions and hydrogen ions, wherein the helium ions are implanted first in the thick surface area and the hydrogen ions are implanted second, and wherein implantation doses of the helium ions and the hydrogen ions each range between 1.10¹⁷ atoms/cm² and 4.10¹⁷ atoms/cm²; and

applying a fracture treatment to the starting substrate adapted to cause a detachment of the thick surface area between the free face and an implantation depth of the helium ions and of the hydrogen ions from a remainder of the starting substrate.

2. The method according to claim 1, wherein the implantation dose of the helium ions is at least equal to the implantation dose of the hydrogen ions.

3. The method according to claim 1 or claim 2, further comprising recycling the remainder of the starting substrate after applying the fracture treatment.

4. The method according to claim 3, further comprising treating the remainder of the starting substrate, before its recycling, comprising at most one polishing of at most 1 micron thickness.

5. The method according to claim 1, further comprising bringing the starting substrate into intimate contact with a host substrate via the free face before applying the fracture treatment.

6. The method according to claim 5, bringing the starting substrate into intimate contact comprises molecular bonding.

7. The method according to claim 5 or claim 6, further comprising depositing at least one layer on the free surface of the starting substrate before bringing the starting substrate into intimate contact with the host substrate.

8. The method according to claim 5 further comprising applying the fracture treatment by applying an embrittlement treatment including a heat treatment to the starting substrate before bringing the starting substrate into intimate contact with the host substrate, and wherein the heat treatment corresponds to at least 85% of the thermo-mechanical budget necessary for obtaining the fracture of the starting substrate at the implantation depth of the hydrogen ions, the method further comprising applying a residual fracture treatment after bringing the starting substrate into intimate contact with the host substrate.

9. The method according to claim 8, wherein applying the embrittlement treatment further comprises depositing a layer in vapor form.

10. The method according to claim 8 or claim 9, wherein applying the embrittlement treatment further comprises applying mechanical stresses.

11. The method according to claim 8, wherein applying the embrittlement treatment comprises applying the heat treatment at a temperature of at most 400°

C.

12. The method according to claim 8, wherein applying the embrittlement treatment furnishes a thermo-mechanical budget of at least 95% of the thermo-mechanical budget necessary to obtain the detachment of the thick surface area.

13. The method according to claim 8, wherein applying the residual fracture treatment includes applying a heat treatment.

14. The method according to claim 13, wherein applying the residual fracture treatment comprises applying the heat treatment at a temperature at most 250°

C.

15. The method according to claim 8, wherein applying the residual fracture treatment includes applying mechanical stresses.

16. The method according to claim 15, wherein applying the residual fracture treatment comprises applying the treatment at room temperature.

17. The method according to claim 15 or claim 16, wherein applying the residual fracture treatment includes applying an ultrasound treatment.

18. The method according to claim 15 or claim 16, wherein applying the residual fracture treatment includes the applying microwaves.

19. The method according to claim 1, wherein helium ion implantation dose ranges between 1.10¹⁷ and 2.10¹⁷ He⁺/cm².

20. The method according to claim 1, wherein the hydrogen ion implantation dose ranges between 1.10¹⁷ and 2.10¹⁷ H⁺/cm².

21. The method according to claim 1, wherein a cumulative implantation dose is between approximately 3.10¹⁷ atoms/cm² and 4.5 10¹⁷ atoms/cm².

22. The method according to claim 1, wherein an implantation energy of the helium ion implantation is greater than an implantation energy of the hydrogen ion implantation.

23. The method according to claim 1, wherein an implantation energy of the helium ions is between 90 keV and 210 keV and an implantation energy of the hydrogen ions is between 60 keV and 120 keV.

24. The method according to claim 1, further comprising applying a finishing heat treatment for perfecting the detachment of all the thin layer, including in any non-bonded areas.