Method for defining semiconductor devices
First Claim
1. A method comprising:
- providing a wafer assembly comprising a substrate having a device side and an opposing back side, and a plurality of semiconductor layers on the device side of the substrate;
applying a laser to cut through the semiconductor layers and into the device side of the substrate, without cutting completely through the substrate to form a plurality of substrate trenches and walls, and to define a plurality of semiconductor devices on the substrate, with the substrate trenches and the walls configured such that at least two substrate trenches and at least one wall are formed between each adjacent semiconductor device; and
removing the substrate from the semiconductor layers after the applying the laser step by laser irradiation of the back side of the substrate with a laser energy, with the walls reducing the laser energy on the semiconductor devices and preventing damage during the laser irradiation.
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Accused Products
Abstract
Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
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Citations
24 Claims
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1. A method comprising:
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providing a wafer assembly comprising a substrate having a device side and an opposing back side, and a plurality of semiconductor layers on the device side of the substrate; applying a laser to cut through the semiconductor layers and into the device side of the substrate, without cutting completely through the substrate to form a plurality of substrate trenches and walls, and to define a plurality of semiconductor devices on the substrate, with the substrate trenches and the walls configured such that at least two substrate trenches and at least one wall are formed between each adjacent semiconductor device; and removing the substrate from the semiconductor layers after the applying the laser step by laser irradiation of the back side of the substrate with a laser energy, with the walls reducing the laser energy on the semiconductor devices and preventing damage during the laser irradiation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method comprising:
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providing a wafer assembly comprising a substrate having a device side and an opposing back side, an n-doped layer on the device side of the substrate, a multiple quantum well (MQW) layer on the n-doped layer, and a p-doped layer on the (MQW) layer; cutting through the p-doped layer, the (MQW) layer, and the n-doped layers and into the device side of the substrate with a laser without cutting completely through the substrate to form a plurality of substrate trenches and walls, and define a plurality of vertical light-emitting diode (VLED) devices on the substrate, with the substrate trenches and the walls configured such that at least two substrate trenches and at least one wall are formed between each adjacent (VLED) device; and removing the substrate from the semiconductor layers after the cutting step by laser irradiation of the back side of the substrate with a laser energy, with the walls reducing the laser energy on the (VLED) devices and preventing damage during the laser irradiation. - View Dependent Claims (19, 20, 21, 22, 23, 24)
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Specification