Light emitting diode having metal nanoparticle layered graphene

• US 8,779,411 B2
• Filed: 11/16/2012
• Issued: 07/15/2014
• Est. Priority Date: 04/26/2012
• Status: Active Grant

• Current Assignee: Gwangju Institute of Science and Technology
• Original Assignee: Gwangju Institute of Science and Technology
• Inventors: Lee, Dong Seon, Park, Seong Ju, Kim, Do Hyung, Shim, Jae Phil, Choe, Min Hyeok, Lee, Tak Hee
• Primary Examiner(s): Soward, Ida M
• Application Number:
  US13/679,353
• Publication Number:
  US 20130285012A1
• Time in Patent Office: 606 Days
• Field of Search: 257/95, 257/103, 257/E33.074, 257/13, 977/720, 977/773, 977/774, 977/825, 977/932
• US Class Current: 257/13
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

The present disclosure provides a light emitting diode and a method of manufacturing the same. The light emitting diode includes a graphene layer on a second conductive semiconductor layer and a plurality of metal nanoparticles formed on some region of the graphene layer, whereby adhesion between the second conductive semiconductor layer comprised of an inorganic material and the graphene layer is enhanced, thereby securing stability and reliability of the light emitting diode. In addition, the light emitting diode allows uniform spreading of electric current, thereby allowing stable emission of light through a surface area of the light emitting diode. The method of manufacturing a light emitting diode includes forming a graphene layer on a second conductive semiconductor layer, forming a mask film on the graphene layer, forming a metal layer within the patterns of the mask film, followed by removing the mask film; and heat treating the metal layer to form a plurality of metal nanoparticles, whereby the metal nanoparticles having a high index of refraction are formed on some region of the graphene layer and provide surface texturing effects, thereby improving light emission efficiency.

Claims

1. A light emitting diode comprising:

a compound semiconductor layer including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer;

a graphene layer formed on the second conductive semiconductor layer;

a plurality of metal nanoparticles formed on the graphene layer;

a first electrode formed on the first conductive semiconductor layer; and

a second electrode formed on the graphene layer,

wherein the metal nanoparticles are formed on some region of the graphene layer.

2. The light emitting diode according to claim 1, wherein the metal nanoparticles formed on the graphene layer occupy from 20% to 40% of a surface area of the graphene layer.

3. The light emitting diode according to claim 1, wherein the some region of the graphene layer is formed with hole patterns periodically arranged at a constant pitch.

4. The light emitting diode according to claim 1, wherein the metal nanoparticles comprise at least one selected from among Au, Ag, Pt, Lu, Rh, Pd, Ir and Os.

5. The light emitting diode according to claim 1, wherein the metal nanoparticles have a particle diameter of 50 nm to 300 nm.

6. The light emitting diode according to claim 1, wherein the compound semiconductor layer is nitride-based compound semiconductor layer.