Semiconductor device and method for manufacturing the same

• US 8,779,418 B2
• Filed: 10/07/2010
• Issued: 07/15/2014
• Est. Priority Date: 10/09/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Miyanaga, Akiharu, Sakata, Junichiro, Sakakura, Masayuki, Takahashi, Masahiro, Kishida, Hideyuki, Yamazaki, Shunpei
• Primary Examiner(s): Warren, Matthew E
• Application Number:
  US12/900,136
• Publication Number:
  US 20110084272A1
• Time in Patent Office: 1,377 Days
• Field of Search: 257/43, 257 57- 60, 257/66, 257/72, 257/E33.002, 257/E33.043, 257/E31.003, 257/E27.116
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1222 with a particular composition, shape or crystalline structure of the active layer
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs

Abstract

An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.

Claims

1. A semiconductor device comprising:

a gate electrode over an insulating surface;

a gate insulating film over the gate electrode;

an oxide semiconductor film over the gate insulating film, the oxide semiconductor film overlapping the gate electrode;

a pair of metal oxide films over the oxide semiconductor film; and

a source electrode and a drain electrode over the pair of metal oxide films,

wherein the oxide semiconductor film comprises a first portion, a second portion and a third portion between the first portion and the second portion,

wherein the source electrode overlaps the first portion of the oxide semiconductor film,

wherein the drain electrode overlaps the second portion of the oxide semiconductor film,

wherein each of the first portion and the second portion of the oxide semiconductor film comprises, on the pair of metal oxide films sides, a region where a concentration of one or a plurality of metals in the oxide semiconductor film is higher than a concentration of one or a plurality of metals in the third portion of the oxide semiconductor film, and

wherein the pair of metal oxide films, the source electrode, and the drain electrode comprise a same metal material.

2. The semiconductor device according to claim 1, wherein the metal in the source electrode and the drain electrode is titanium, tungsten, or molybdenum.

3. The semiconductor device according to claim 1, wherein a thickness of the region of the oxide semiconductor film is more than or equal to 2 nm and less than or equal to 10 nm.

4. The semiconductor device according to claim 1, wherein a thickness of each of the pair of metal oxide films is more than or equal to 2 nm and less than or equal to 10 nm.

5. The semiconductor device according to claim 1, further comprising an insulating film over the source electrode and the drain electrode, wherein the insulating film is in direct contact with the oxide semiconductor film.

6. A semiconductor device comprising:

a gate electrode over an insulating surface;

a gate insulating film over the gate electrode;

an oxide semiconductor film including indium, gallium, and zinc over the gate insulating film, the oxide semiconductor film overlapping the gate electrode;

a pair of metal oxide films over the oxide semiconductor film; and

a source electrode and a drain electrode over the pair of metal oxide films,

wherein the oxide semiconductor film comprises a first portion, a second portion and a third portion between the first portion and the second portion,

wherein the source electrode overlaps the first portion of the oxide semiconductor film,

wherein the drain electrode overlaps the second portion of the oxide semiconductor film,

wherein each of the first portion and the second portion of the oxide semiconductor film comprises, on the pair of metal oxide films sides, a region where a concentration of one or a plurality of indium, gallium, and zinc is higher than a concentration of one or a plurality of indium, gallium, and zinc in the third portion of the oxide semiconductor film, and

wherein the pair of metal oxide films, the source electrode, and the drain electrode comprise a same metal material.

7. The semiconductor device according to claim 6, wherein the metal in the source electrode and the drain electrode is titanium, tungsten, or molybdenum.

8. The semiconductor device according to claim 6, wherein a thickness of the region of the oxide semiconductor film is more than or equal to 2 nm and less than or equal to 10 nm.

9. The semiconductor device according to claim 6, wherein a thickness of each of the pair of metal oxide films is more than or equal to 2 nm and less than or equal to 10 nm.

10. The semiconductor device according to claim 6, further comprising an insulating film over the source electrode and the drain electrode, wherein the insulating film is in direct contact with the oxide semiconductor film.

11. A semiconductor device comprising:

a gate electrode over a substrate;

a gate insulating film over the gate electrode;

an oxide semiconductor film comprising a first metal over the gate insulating film, the oxide semiconductor film overlapping the gate electrode;

a first metal oxide film over the oxide semiconductor film;

a second metal oxide film over the oxide semiconductor film;

a source electrode over the first metal oxide film; and

a drain electrode over the second metal oxide film;

wherein each of the first metal oxide film, the second metal oxide film, the source electrode and the drain electrode comprises a second metal,

wherein the oxide semiconductor film comprises a first portion, a second portion and a third portion between the first portion and the second portion,

wherein the source electrode overlaps the first portion of the oxide semiconductor film,

wherein the drain electrode overlaps the second portion of the oxide semiconductor film,

wherein a first region of the oxide semiconductor film is in direct contact with the first metal oxide film,

wherein a second region of the oxide semiconductor film is in direct contact with the second metal oxide film, and

wherein a concentration of the first metal in the first region and the second region is higher than a concentration of the first metal in the third portion.

12. The semiconductor device according to claim 11, wherein the second metal is titanium, tungsten, or molybdenum.

13. The semiconductor device according to claim 11, wherein a thickness of each of the first region and the second region is more than or equal to 2 nm and less than or equal to 10 nm.

14. The semiconductor device according to claim 11, wherein a thickness of each of the first metal oxide film and the second metal oxide film is more than or equal to 2 nm and less than or equal to 10 nm.

15. The semiconductor device according to claim 11, further comprising an insulating film over the source electrode and the drain electrode, wherein the insulating film is in direct contact with the oxide semiconductor film.

16. The semiconductor device according to claim 11,

wherein the source electrode is in direct contact with the gate insulating film, and

wherein the drain electrode is in direct contact with the gate insulating film.

17. A semiconductor device comprising:

a gate electrode over a substrate;

a gate insulating film over the gate electrode;

an oxide semiconductor film comprising a first metal over the gate insulating film, the oxide semiconductor film overlapping the gate electrode;

a first metal oxide film over the oxide semiconductor film;

a second metal oxide film over the oxide semiconductor film;

a source electrode over the first metal oxide film; and

a drain electrode over the second metal oxide film;

wherein each of the first metal oxide film, the second metal oxide film, the source electrode, and the drain electrode comprises a second metal,

wherein the oxide semiconductor film comprises a first portion, a second portion and a third portion between the first portion and the second portion,

wherein the source electrode overlaps the first portion of the oxide semiconductor film,

wherein the drain electrode overlaps the second portion of the oxide semiconductor film,

wherein a first region of the oxide semiconductor film is in direct contact with the first metal oxide film,

wherein a second region of the oxide semiconductor film is in direct contact with the second metal oxide film, and

wherein the first region and the second region have a higher indium concentration than the third portion.

18. The semiconductor device according to claim 17, wherein the second metal is titanium, tungsten, or molybdenum.

19. The semiconductor device according to claim 17, wherein a thickness of each of the first region and the second region is more than or equal to 2 nm and less than or equal to 10 nm.

20. The semiconductor device according to claim 17, wherein a thickness of each of the first metal oxide film and the second metal oxide film is more than or equal to 2 nm and less than or equal to 10 nm.

21. The semiconductor device according to claim 17, further comprising an insulating film over the source electrode and the drain electrode, wherein the insulating film is in direct contact with the oxide semiconductor film.

22. The semiconductor device according to claim 17,

wherein the source electrode is in direct contact with the gate insulating film, and

wherein the drain electrode is in direct contact with the gate insulating film.