Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor

• US 8,779,419 B2
• Filed: 03/09/2012
• Issued: 07/15/2014
• Est. Priority Date: 03/23/2007
• Status: Active Grant

• Current Assignee: Idemitsu Kosan Company Limited
• Original Assignee: Idemitsu Kosan Company Limited
• Inventors: Yano, Koki, Kazuyoshi, Inoue
• Primary Examiner(s): Payen, Marvin
• Application Number:
  US13/416,433
• Publication Number:
  US 20120168748A1
• Time in Patent Office: 858 Days
• Field of Search: 257/43, 257/E29.079, 257/E29.296
• US Class Current: 257/43
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An object of the present invention is to provide a novel semiconductor device which is excellent in stability, uniformity, reproducibility, heat resistance, durability and the like, and can exert excellent transistor properties. The semiconductor device is a thin-film transistor, and this thin-film transistor uses, as an active layer, a polycrystalline oxide semiconductor thin film containing In and two or more metals other than In and having an electron carrier concentration of less than 1×10¹⁸/cm³.

Claims

1. A semiconductor device which uses a crystalline oxide as a semiconductor,

wherein the crystalline oxide contains In and two or more metals other than In, and the crystalline oxide has an electron carrier concentration of less than 1×

10¹⁸/cm³,

wherein the number (=[In]) of the atoms of In and the sum (=[X]) of the atoms of the two or more metals other than In contained in the crystalline oxide satisfy the relation 0.0001≦

[X]/([X]+[In])<

0.1, and

the two or more metals other than In are selected from;

(a) Zn and Mg, (b) Zn and Cu, (c) Zn and Co, (d) Zn and Ni, (e) Zn and Ca, and (f) Zn and Sr.

2. A semiconductor device according to claim 1, wherein [X]/([X]F[In]) satisfies the relation 0.01≦

[X]/([X]+[In])≦

0.097.

3. A semiconductor device according to claim 1, wherein [X]/([X]+[In]) satisfies the relation 0.06≦

[X]/([X]+[In])≦

0.095.

4. A semiconductor device according to claim 1, wherein [X]/([X]+[In]) satisfies the relation 0.0001≦

[X]/([X]+[In])≦

0.07.

18. A semiconductor device according to claim 1, wherein the crystalline oxide is patterned in an amorphous state, and then crystallized by a heat treatment in the presence of oxygen.

5. A semiconductor device which uses a crystalline oxide as a semiconductor, wherein

the crystalline oxide contains In and two or more metals other than In, and the crystalline oxide has an electron carrier concentration of less than 1×

10¹⁸/cm³;

the two or more metals other than In are at least a positive bivalent metal and a positive tetravalent metal;

the positive bivalent metal is an element selected from Zn, Mg, Cu, Ni, Co, Ca and Sr;

the positive tetravalent metal is an element selected from Sn, Ge, Si, Ti, C, Zr and Hf; and

a relation among the number (=[In]) of the atoms of In, the number (=[M2]) of the atoms of the positive bivalent metal and the number (=[M4]) of the atoms of the positive tetravalent metal contained in the crystalline oxide satisfies the following ratios;

0.0001≦

[M2]/([M2]+[M4]+[In])<

0.1; and

[M4]/([M2]+[M4])=0.0001 to 0.3.

6. A semiconductor device according to claim 5, wherein the number (=[In]) of the atoms of In and the sum (=[X]) of the atoms of the two or more metals other than In contained in the crystalline oxide satisfy the relation 0.0001≦

[X]/([X]+[In])<

0.1.

7. A semiconductor device according to claim 6, wherein [X]/([X]+[In]) satisfies the relation 0.01≦

[X]/([X]+[In])≦

0.097.

8. A semiconductor device according to claim 6, wherein [X]/([X]+[In]) satisfies the relation 0.06≦

[X]/([X]+[In])≦

0.095.

9. A semiconductor device according to claim 6, wherein [X]/([X]+[In]) satisfies the relation 0.0001≦

[X]/([X]+[In])≦

0.07.

19. A semiconductor device according to claim 5, wherein the crystalline oxide is patterned in an amorphous state, and then crystallized by a heat treatment in the presence of oxygen.

10. A semiconductor device which uses a crystalline oxide as a semiconductor, wherein

the crystalline oxide contains In and two or more metals other than In, and the crystalline oxide has an electron carrier concentration of less than 1×

10¹⁸/cm³;

the number (=[In]) of the atoms of In and the sum (=[X]) of the atoms of the two or more metals other than In contained in the crystalline oxide satisfy the relation 0.0001≦

[X]/([X]+[In])<

0.1;

the two or more metals other than In are at least a positive bivalent metal and a positive tetravalent metal;

the positive bivalent metal is an element selected from Zn, Mg, Cu, Ni, Co, Ca and Sr; and

the positive tetravalent metal is an element selected from Ga, Al, B, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

11. A semiconductor device according to claim 10, wherein [X]/([X]+[In]) satisfies the relation 0.01≦

[X]/([X]+[In])≦

0.097.

12. A semiconductor device according to claim 10, wherein [X]/([X]+[In]) satisfies the relation 0.06≦

[X]/([X]+[In])≦

0.095.

13. A semiconductor device according to claim 10, wherein [X]/([X]+[In]) satisfies the relation 0.0001≦

[X]/([X]+[In])≦

0.07.

20. A semiconductor device according to claim 10, wherein the crystalline oxide is patterned in an amorphous state, and then crystallized by a heat treatment in the presence of oxygen.

14. A semiconductor device which uses a crystalline oxide as a semiconductor, wherein

the crystalline oxide contains In and two or more metals other than In, and the crystalline oxide has an electron carrier concentration of less than 1×

10¹⁸/cm³,

the number (=[In]) of the atoms of In and the sum (=[X]) of the atoms of the two or more metals other than In contained in the crystalline oxide satisfy the relation 0.0001≦

[X]/([X]+[In])<

0.1, and

the two or more metals other than In are one selected from;

(a) Zn and Mg, (b) Zn and Cu, (c) Zn and Ni, (d) Zn and Ga, (e) Zn and Al, (f) Zn and Ce, (g) Zn and Dy, (h) Zn and Er, (i) Zn and Yb, (j) Zn and Ge, (k) Zn and Ti, (l) Zn, Mg, and Sn, and (m) Mg, Dy, and Ge.

15. A semiconductor device according to claim 14, wherein [X]/([X]+[In]) satisfies the relation 0.01≦

[X]/([X]+[In])≦

0.097.

16. A semiconductor device according to claim 14, wherein [X]/([X]+[In]) satisfies the relation 0.06≦

[X]/([X]+[In])≦

0.095.

17. A semiconductor device according to claim 14, wherein [X]/([X]+[In]) satisfies the relation 0.0001≦

[X]/[X]+[In])≦

0.07.

21. A semiconductor device according to claim 14, wherein the crystalline oxide is patterned in an amorphous state, and then crystallized by a heat treatment in the presence of oxygen.