Light emitting device

• US 8,779,431 B2
• Filed: 09/26/2013
• Issued: 07/15/2014
• Est. Priority Date: 01/17/2001
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Koyama, Jun, Arao, Tatsuya, Azami, Munehiro
• Primary Examiner(s): Malsawma, Lex
• Application Number:
  US14/037,437
• Publication Number:
  US 20140021459A1
• Time in Patent Office: 292 Days
• Field of Search: 257/89, 257/E33.005, 257/E51.018
• US Class Current: 257/59
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals

Abstract

A light emitting device is provided which can prevent a change in gate voltage due to leakage or other causes and at the same time can prevent the aperture ratio from lowering. A capacitor storage is formed from a connection wiring line, an insulating film, and a capacitance wiring line. The connection wiring line is formed over a gate electrode and an active layer of a TFT of a pixel, and is connected to the active layer. The insulating film is formed on the connection wiring line. The capacitance wiring line is formed on the insulating film. This structure enables the capacitor storage to overlap the TFT, thereby increasing the capacity of the capacitor storage while keeping the aperture ratio from lowering. Accordingly, a change in gate voltage due to leakage or other causes can be avoided to prevent a change in luminance of an OLED and flickering of screen in analog driving.

Claims

1. A light-emitting device including a pixel portion, the pixel portion comprising:

a first transistor and a second transistor, each including a semiconductor region, a gate insulating film, and a gate electrode, wherein the gate electrode of the second transistor is electrically connected to the semiconductor region of the first transistor;

a first wiring electrically connected to the semiconductor region of the first transistor;

a second wiring electrically connected to the semiconductor region of the second transistor;

a first insulating film over the first transistor and the second transistor;

a pixel electrode over and in contact with the first insulating film; and

a third wiring over and in contact with the first insulating film, wherein the third wiring crosses over the first wiring and the second wiring.

2. The light-emitting device according to claim 1, wherein the first wiring is a source line, the second wiring is a power supply line, and the third wiring is a capacitance wiring line.

3. The light-emitting device according to claim 1, further comprising an organic light emitting layer over the pixel electrode, and a cathode over the organic light emitting layer.

4. The light-emitting device according to claim 1, wherein the pixel electrode and the third wiring include indium tin oxide.

5. The light-emitting device according to claim 1, wherein the first insulating film includes an organic insulating film.

6. The light-emitting device according to claim 1, wherein the light-emitting device is incorporated in one selected from the group consisting of a display device, a camera, a computer, an image reproducing device, a goggle type display, and a cellular phone.

7. A light-emitting device including a pixel portion, the pixel portion comprising:

a first transistor and a second transistor, each including a semiconductor region, a gate insulating film, and a gate electrode, wherein the gate electrode of the second transistor is electrically connected to the semiconductor region of the first transistor;

a first wiring electrically connected to the semiconductor region of the first transistor;

a second wiring electrically connected to the semiconductor region of the second transistor;

a first insulating film over the first transistor and the second transistor;

a pixel electrode over and in contact with the first insulating film; and

a third wiring over and in contact with the first insulating film, wherein the third wiring crosses over the first wiring and the second wiring, and wherein the third wiring overlaps the gate electrode of the first transistor.

8. The light-emitting device according to claim 7, wherein the first wiring is a source line, the second wiring is a power supply line, and the third wiring is a capacitance wiring line.

9. The light-emitting device according to claim 7, further comprising an organic light emitting layer over the pixel electrode, and a cathode over the organic light emitting layer.

10. The light-emitting device according to claim 7, wherein the pixel electrode and the third wiring include indium tin oxide.

11. The light-emitting device according to claim 7, wherein the first insulating film includes an organic insulating film.

12. The light-emitting device according to claim 7, wherein the light-emitting device is incorporated in one selected from the group consisting of a display device, a camera, a computer, an image reproducing device, a goggle type display, and a cellular phone.

13. A light-emitting device including a pixel portion, the pixel portion comprising:

a first transistor and a second transistor, each including a semiconductor region, a gate insulating film over the semiconductor region, and a gate electrode over the gate insulating film, wherein the gate electrode of the second transistor is electrically connected to the semiconductor region of the first transistor;

a first wiring over the gate insulating film, wherein the gate electrode of the first transistor is part of the first wiring;

a first insulating film over the first transistor, the second transistor, and the first wiring;

a second wiring and a third wiring over the first insulating film, wherein the second wiring is electrically connected to the semiconductor region of the first transistor and wherein the third wiring is electrically connected to the semiconductor region of the second transistor;

a second insulating film over the second wiring and the third wiring; and

a pixel electrode and a fourth wiring over and in contact with the second insulating film,

wherein each of the second wiring and the third wiring crosses over the first wiring, and

wherein the fourth wiring crosses over the second wiring and the third wiring.

14. The light-emitting device according to claim 13, wherein the first wiring is a gate line, the second wiring is source line, the third wiring is a power supply line, and the fourth wiring is a capacitance wiring line.

15. The light-emitting device according to claim 13, further comprising an organic light emitting layer over the pixel electrode, and a cathode over the organic light emitting layer.

16. The light-emitting device according to claim 13, wherein the pixel electrode and the fourth wiring include indium tin oxide.

17. The light-emitting device according to claim 13, wherein the second insulating film includes an organic insulating film.

18. The light-emitting device according to claim 13, wherein the light-emitting device is incorporated in one selected from the group consisting of a display device, a camera, a computer, an image reproducing device, a goggle type display, and a cellular phone.

19. The light-emitting device according to claim 13, wherein the fourth wiring overlaps the gate electrode of the first transistor.