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Semiconductor device and manufacturing method thereof

  • US 8,779,432 B2
  • Filed: 01/20/2012
  • Issued: 07/15/2014
  • Est. Priority Date: 01/26/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first insulating layer;

    a trench in the first insulating layer;

    an oxide semiconductor layer in contact with an inner wall surface of the trench;

    a gate insulating layer adjacent to the oxide semiconductor layer;

    a gate electrode in the trench and adjacent to the oxide semiconductor layer with the gate insulating layer interposed therebetween; and

    a source electrode or a drain electrode over and electrically connected with the oxide semiconductor layer,wherein a portion of the gate electrode is over the source electrode or the drain electrode.

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