Semiconductor device and manufacturing method thereof

• US 8,779,479 B2
• Filed: 02/28/2013
• Issued: 07/15/2014
• Est. Priority Date: 11/13/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Koyama, Jun
• Primary Examiner(s): Nhu, David
• Application Number:
  US13/779,833
• Publication Number:
  US 20130175524A1
• Time in Patent Office: 502 Days
• Field of Search: 257/288, 257/249, 257/322, 257/347, 257/346, 257/326, 257/728, 257/E21.006, 257/E21.051, 257/E21.077, 257/E21.17, 257/E21.23, 257/E21.32, 257/E21.227, 257/E21.229, 257/E21.304, 257/E21.311
• US Class Current: 257/288
• CPC Class Codes: H01L 21/8221 Three dimensional integrated circuits stacked in different levels
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/1207 combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00

Abstract

An object is to provide a semiconductor device with a novel structure. A semiconductor device includes a first transistor, which includes a channel formation region provided in a substrate including a semiconductor material, impurity regions, a first gate insulating layer, a first gate electrode, and a first source electrode and a first drain electrode, and a second transistor, which includes an oxide semiconductor layer over the substrate including the semiconductor material, a second source electrode and a second drain electrode, a second gate insulating layer, and a second gate electrode. The second source electrode and the second drain electrode include an oxide region formed by oxidizing a side surface thereof, and at least one of the first gate electrode, the first source electrode, and the first drain electrode is electrically connected to at least one of the second gate electrode, the second source electrode, and the second drain electrode.

Claims

1. A semiconductor device comprising:

a first transistor including a channel formation region in a semiconductor substrate, a first gate insulating layer over the channel formation region, a first gate electrode over the first gate insulating layer;

a first insulating layer over the first gate electrode;

a second insulating layer over the first insulating layer;

a second transistor including an oxide semiconductor layer over the second insulating layer, a second gate insulating layer over the oxide semiconductor layer, and a second gate electrode over the second gate insulating layer;

a third insulating layer over the second gate electrode; and

a fourth insulating layer over the third insulating layer.

2. The semiconductor device according to claim 1, further comprising a source electrode and a drain electrode over the oxide semiconductor layer, and wherein end portions of the source electrode and the drain electrode have an oxide region.

3. The semiconductor device according to claim 1, wherein an off-state current of the second transistor is 1×

10<sup>−

13</sup> A or less.

4. The semiconductor device according to claim 1, wherein a hydrogen concentration of the oxide semiconductor layer is 5×

10¹⁹/cm³ or less.

5. The semiconductor device according to claim 1, wherein the oxide semiconductor layer has a microcrystalline structure or a polycrystalline structure.

6. The semiconductor device according to claim 1, wherein the semiconductor device is incorporated in one selected from the group consisting of a computer, a personal digital assistant, an electronic book, a phone, a camera, and a television set.

7. A semiconductor device comprising:

a first transistor including a channel formation region in a semiconductor substrate, a first gate insulating layer over the channel formation region, a first gate electrode over the first gate insulating layer;

a first organic insulating layer over the first gate electrode;

a second inorganic insulating layer over the first organic insulating layer;

a second transistor including an oxide semiconductor layer over the second inorganic insulating layer, a second gate insulating layer over the oxide semiconductor layer, and a second gate electrode over the second gate insulating layer;

a third insulating layer over the second gate electrode; and

a fourth insulating layer over the third insulating layer.

8. The semiconductor device according to claim 7, further comprising a source electrode and a drain electrode over the oxide semiconductor layer, and wherein end portions of the source electrode and the drain electrode have an oxide region.

9. The semiconductor device according to claim 7, wherein an off-state current of the second transistor is 1×

10<sup>−

13</sup> A or less.

10. The semiconductor device according to claim 7, wherein a hydrogen concentration of the oxide semiconductor layer is 5×

10¹⁹/cm³ or less.

11. The semiconductor device according to claim 7, wherein the oxide semiconductor layer has a microcrystalline structure or a polycrystalline structure.

12. The semiconductor device according to claim 7, wherein the semiconductor device is incorporated in one selected from the group consisting of a computer, a personal digital assistant, an electronic book, a phone, a camera, and a television set.

13. A semiconductor device comprising:

a first transistor including a channel formation region in a semiconductor substrate, a first gate insulating layer over the channel formation region, a first gate electrode over the first gate insulating layer;

a first insulating layer over the first gate electrode;

a second insulating layer over the first insulating layer;

a second transistor including an oxide semiconductor layer over the second insulating layer, a second gate insulating layer over the oxide semiconductor layer, and a second gate electrode over the second gate insulating layer;

a third insulating layer over the second gate electrode; and

a fourth insulating layer over the third insulating layer,

wherein the oxide semiconductor layer does not overlap the channel formation region in the semiconductor substrate.

14. The semiconductor device according to claim 13, further comprising a source electrode and a drain electrode over the oxide semiconductor layer, and wherein end portions of the source electrode and the drain electrode have an oxide region.

15. The semiconductor device according to claim 13, wherein an off-state current of the second transistor is 1×

10<sup>−

13</sup> A or less.

16. The semiconductor device according to claim 13, wherein a hydrogen concentration of the oxide semiconductor layer is 5×

10¹⁹/cm³ or less.

17. The semiconductor device according to claim 13, wherein the oxide semiconductor layer has a microcrystalline structure or a polycrystalline structure.

18. The semiconductor device according to claim 13, wherein the semiconductor device is incorporated in one selected from the group consisting of a computer, a personal digital assistant, an electronic book, a phone, a camera, and a television set.