Semiconductor memory device
First Claim
1. A semiconductor memory device comprising:
- a first transistor;
a second transistor;
a third transistor comprising an oxide semiconductor film; and
a capacitor comprising;
a conductive film facing side surfaces of one of a source electrode and a drain electrode of the third transistor; and
a first insulating film between the conductive film and the one of the source electrode and the drain electrode of the third transistor,wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, andwherein the one of the source electrode and the drain electrode of the third transistor is electrically connected to a gate electrode of the first transistor.
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Accused Products
Abstract
In the semiconductor memory device, one of a source and a drain of a first transistor is connected to one of a source and a drain of a second transistor, a gate of the first transistor is connected to one of a source and a drain of a third transistor and one of a pair of capacitor electrodes included in a capacitor, the other of the source and the drain of the first transistor and the other of the source and the drain of the third transistor are connected to a bit line, the other of the pair of capacitor electrodes included in the capacitor is connected to a common wiring, and the common wiring is grounded (GND). The common wiring has a net shape when seen from the above, and the third transistor is provided in a mesh formed by the common wiring.
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Citations
21 Claims
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1. A semiconductor memory device comprising:
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a first transistor; a second transistor; a third transistor comprising an oxide semiconductor film; and a capacitor comprising; a conductive film facing side surfaces of one of a source electrode and a drain electrode of the third transistor; and a first insulating film between the conductive film and the one of the source electrode and the drain electrode of the third transistor, wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, and wherein the one of the source electrode and the drain electrode of the third transistor is electrically connected to a gate electrode of the first transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 21)
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11. A semiconductor memory device comprising:
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a first transistor; a second transistor; a third transistor comprising an oxide semiconductor film; and a capacitor comprising; a conductive film; and a first insulating film between the conductive film and at least one of a source electrode and a drain electrode of the third transistor, wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, wherein one of the source electrode and the drain electrode of the third transistor is electrically connected to a gate electrode of the first transistor, wherein the conductive film has a net shape when seen from the above, and wherein the third transistor is provided in a mesh formed by the conductive film. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification