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Insulated gate semiconductor device

  • US 8,779,507 B2
  • Filed: 03/30/2012
  • Issued: 07/15/2014
  • Est. Priority Date: 03/31/2011
  • Status: Active Grant
First Claim
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1. An insulated gate semiconductor device comprising:

  • a first semiconductor layer of a first general conductivity type;

    a channel layer of a second general conductivity type disposed on the first semiconductor layer;

    a plurality of first trenches extending in a first direction in the plan view of the semiconductor device, the first trenches penetrating through the channel layer and reaching the first semiconductor layer;

    a plurality of second trenches extending in a second direction in the plan view, each of the second trenches connecting a corresponding pair of first trenches in the plan view;

    a first insulating film provided on inner walls of the first trenches and the second trenches;

    a gate electrode disposed in the first trenches and the second trenches;

    a second insulating film covering the gate electrode;

    a source region of the first general conductivity type formed in a surface portion of the channel layer, the source region extending in the second direction in the plan view; and

    a body region of the second general conductivity type formed in a surface portion of the channel layer so as to be in contact with the source region and a corresponding first trench;

    wherein two of the first trenches and two of the second trenches define a cell which makes transistor operation possible, andthe cell comprises two body regions of the second general conductivity type formed in a surface portion of the channel layer.

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