RF cavity and accelerator having such an RF cavity

• US 8,779,697 B2
• Filed: 10/18/2010
• Issued: 07/15/2014
• Est. Priority Date: 11/17/2009
• Status: Active Grant

• Current Assignee: Siemens AG
• Original Assignee: Siemens AG
• Inventors: Baurichter, Arnd, Heid, Oliver, Hughes, Timothy
• Primary Examiner(s): Owens, Douglas W
• Assistant Examiner(s): SATHIRAJU, SRINIVAS
• Application Number:
  US13/510,120
• Publication Number:
  US 20120229054A1
• Time in Patent Office: 1,366 Days
• US Class Current: 315/505
• CPC Class Codes: H05H 7/02 Circuits or systems for supplying or feeding radio-frequency energy radio-frequency generators H03B
• CPC Class Codes: H05H 7/18 Cavities; Resonators travelling-wave tubes H01J23/18; hyperfrequency cavities in general H01P7/04, H01P7/06
• CPC Class Codes: H05H 7/22 Details of linear accelerators, e.g. drift tubes H05H7/02 - H05H7/20 take precedence

Abstract

An RF cavity includes a chamber, a conductive wall that encloses the chamber and has an inner side and an outer side, a switch arrangement comprising a plurality of solid-state switches arranged along a circumference of the wall around the chamber, wherein the solid-state switches are connected to the conductive wall such that RF currents are induced in the conductive wall when the switch arrangement is activated, as a result of which RF power is coupled into the chamber of the RF cavity, and a shielding device located on the outer side of the conductive wall, along a circumference of the RF cavity, the shielding device configured to increase the impedance of a propagation path of RF currents along the outer side of the wall such that the RF currents coupled into the wall are suppressed on the outer side of the wall.

Claims

1. An RF cavity, comprising:

a chamber,

a conductive wall that encloses the chamber and has an inner side and an outer side, and

a switch arrangement comprising a plurality of solid-state switches arranged around a circumference of the conductive wall around the chamber at a particular location along an axial length of the chamber,

wherein the solid-state switches are connected to the conductive wall such that RF currents are induced in the conductive wall when the switch arrangement is activated, as a result of which RF power is coupled into the chamber of the RF cavity, and

a ring-shared shielding device located on the outer side of the conductive wall and extending around the circumference of the RF cavity, the shielding device configured to increase the impedance of a propagation path of RF currents along the outer side of the conductive wall such that the RF currents coupled into the conductive wall are suppressed on the outer side of the conductive wall and directed to the inner side of the conductive wall.

2. The RF cavity of claim 1, wherein:

the conductive wall comprises a first section and a second section insulated from the first section, and

the shielding device comprises a first part and a second part, the first part being arranged on the first section of the conductive wall and the second part being arranged on the second section of the conductive wall.

3. The RF cavity of claim 2, wherein the insulation between the first section and the second section of the conductive wall comprises a vacuum seal.

4. The RF cavity of claim 1, wherein the shielding device comprises a ribbed conductive structure.

5. The RF cavity of claim 1, wherein the shielding device comprises a ferrite ring.

6. The RF cavity of claim 1, wherein the shielding device comprises λ

/4 spur line.

7. The RF cavity of claim 1, wherein at least a part of the shielding device is sunk into a recess on the outer side of the conductive wall.

8. The RF cavity of claim 7, wherein a λ

/4 spur line is formed by the recess in the conductive wall.

9. The RF cavity of claim 8, wherein the recess is filled with a dielectric.

10. The RF cavity of claim 8, wherein the λ

/4 spur line is folded.

11. The RF cavity of claim 1, wherein the solid-state switches are enclosed by a protective cage connected to the outer side of the conductive wall at a connection location, such that the shielding device lies between the connection location and the position where the RF currents are coupled into the wall by the solid-state switches.

12. The RF cavity of claim 1, wherein at least a part of the shielding device is applied on the outer side of the conductive wall.

13. The RF cavity of claim 1, wherein the shielding device is formed by a conductive protective cage that encloses the solid-state switches and the inner side of which is ribbed.

14. The RF cavity of claim 1, wherein the RF cavity is formed as a coaxial electrical line.

15. The RF cavity of claim 1, wherein the RF cavity is formed as an RF resonator for accelerating particles.

16. An accelerator comprising:

a plurality of RF cavities, each comprising;

a chamber,

a conductive wall that encloses the chamber and has an inner side and an outer side, and

a switch arrangement comprising a plurality of solid-state switches arranged around a circumference of the conductive wall around the chamber at a particular location along an axial length of the chamber,

wherein the solid-state switches are connected to the conductive wall such that RF currents are induced in the conductive wall when the switch arrangement is activated, as a result of which RF power is coupled into the chamber of the RF cavity, and

a ring-shaped shielding device located on the outer side of the conductive wall and extending around the circumference of the RF cavity, the shielding device configured to increase the impedance of a propagation path of RF currents along the outer side of the conductive wall such that the RF currents coupled into the conductive wall are suppressed on the outer side of the conductive wall and directed to the inner side of the conductive wall.