Optical alignment systems for forming LEDs having a rough surface

• US 8,781,213 B2
• Filed: 11/22/2011
• Issued: 07/15/2014
• Est. Priority Date: 12/02/2009
• Status: Expired due to Fees

• Current Assignee: Ultratech Incorporated (Veeco Instruments Incorporated)
• Original Assignee: Ultratech Incorporated (Veeco Instruments Incorporated)
• Inventors: Hsieh, Robert L., Nguyen, Khiem, Flack, Warren W., Hawryluk, Andrew M.
• Primary Examiner(s): Desire, Gregory M
• Application Number:
  US13/302,308
• Publication Number:
  US 20120062726A1
• Time in Patent Office: 966 Days
• Field of Search: 219/385, 356/401, 356/620, 382/151, 438/7, 438/16
• US Class Current: 382/151
• CPC Class Codes: G03F 9/7065 Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
• CPC Class Codes: G03F 9/7076 Mark details, e.g. phase grating mark, temporary mark
• CPC Class Codes: G03F 9/708 Mark formation
• CPC Class Codes: G03F 9/7084 Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
• CPC Class Codes: G03F 9/7088 Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

An alignment system for aligning a wafer when lithographically fabricating LEDs having an LED wavelength λ_LED is disclosed. The system includes the wafer. The wafer has a roughened alignment mark with a root-mean-square (RMS) surface roughness σ_S. The system has a lens configured to superimpose an image of the reticle alignment mark with an image of the roughened alignment mark. The roughened alignment marked image is formed with alignment light having a wavelength λ_A that is in the range from about 2σ_S to about 8σ_S. An image sensor detects the superimposed image. An image processing unit processes the detected superimposed image to measure an alignment offset between the wafer and the reticle.

Claims

1. An alignment system for aligning a wafer when lithographically fabricating on the wafer a light-emitting diode (LED) having a wavelength λ

_LED, comprising;

the wafer, with the wafer having at least one wafer alignment mark;

a rough surface formed on or above the wafer alignment mark and on a layer having a refractive index n, the rough surface having a root-mean-square (RMS) surface roughness σ

_S that is within one of the following ranges;

i) from about 2λ

_LED to about 8λ

_LED;

ii) from about (0.5)λ

_LED/n to λ

_LED/n;

or

iii) from about λ

_LED/n to λ

_LED;

a light source that illuminates the at least one wafer alignment mark with alignment light having a wavelength λ

_A that is in the range from about 2σ

_S to about 8σ

_S;

a lens configured to form an image of the at least one wafer alignment mark at the alignment light wavelength λ

_A;

an image sensor configured to detect the image and form therefrom a digital alignment mark image; and

an image processing unit electrically connected to the image sensor and configured to receive and compare the digital alignment mark image to an alignment reference to establish a wafer alignment with respect to the alignment reference.

2. The alignment system of claim 1, further comprising a reticle having a reticle alignment mark that serves as the alignment reference.

3. The alignment system of claim 2, wherein lithographically forming the LED includes using a lithography system having a projection lens, and wherein the lens and the projection lens work in conjunction to form the image of the at least one wafer alignment mark.

4. The alignment system of claim 3, wherein the lens and projection lens work in conjunction to form on the image sensor a superposition of an image of the reticle alignment mark and the wafer alignment mark image.

5. The alignment system of claim 1, wherein the alignment light wavelength λ

_A is in the range from about 1 μ

m to about 2 μ

m.

7. The alignment system of claim 1, wherein the layer upon which the rough surface is formed is either a p-GaN layer or a transparent conducting layer.

8. The alignment system of claim 1, wherein the alignment light from the light source passes through the lens to illuminate the at least one wafer alignment mark.

9. The alignment system of claim 1, wherein the lithography system includes a reticle with an alignment mark that serves as the alignment mark reference, and wherein the image processing unit is configured to perform pattern recognition of a digital alignment mark image and the reticle alignment mark to establish the wafer alignment.

10. The alignment system of claim 9, wherein the image processing unit is configured to control the lithography system to bring the wafer and the reticle into alignment base on the established wafer alignment.

6. The alignment system of 1, further comprising the image processing unit configured to perform enhanced global alignment using multiple wafer alignment marks.

11. An alignment system for aligning a wafer to a reticle having a reticle alignment mark when lithographically fabricating, with a lithography system having a projection lens, a light-emitting diode (LED) having an LED wavelength λ

_LED, the system comprising;

the wafer, wherein the wafer includes a roughened alignment mark having a root-mean-square (RMS) surface roughness σ

_S;

a lens configured to superimpose an image of the reticle alignment mark with an image of the roughened alignment mark as formed with alignment light having a wavelength λ

_A that is in the range from about 2σ

_S to about 8σ

_S;

an image sensor configured to detect the superimposed image and form therefrom digital superimposed image representative of the superimposed image; and

an image processing unit electrically connected to the image sensor and adapted to receive the digital superimposed image and perform pattern recognition of the digital superimposed image to measure an alignment offset between the wafer and reticle.

12. The alignment system of claim 11, wherein the image processing unit is configured to generate a control signal that causes the lithography system to align the wafer and reticle.

13. The alignment system of claim 11, wherein the image processing unit is configured to perform enhanced global alignment using multiple roughened alignment marks.

14. The alignment system of claim 11, wherein the roughened alignment mark resides below a transparent conducting layer.

15. The alignment system of claim 11, wherein the lens works in conjunction with the projection lens to form the superimposed image.

16. The alignment system of claim 11, wherein the alignment light wavelength λ

_A is in the range from about 1 μ

m to about 2 μ

m.

17. The alignment system of claim 11, further comprising:

a light source configured to generate the alignment light; and

wherein the lens is configured to direct the alignment light to the roughened alignment mark and form the image of the roughened alignment mark with reflected alignment light.

18. An alignment system for aligning a wafer to a reticle having a reticle alignment mark when lithographically fabricating, with a lithography system with a projection lens, a light-emitting diode (LED) having an LED wavelength λ

_LED, the system comprising;

the wafer, wherein the wafer includes a roughened alignment mark having a root-mean-square (RMS) surface roughness σ

_S;

the projection lens, with projection lens configured to work in conjunction with a lens to form a superimposed image that includes;

i) an image of the roughened alignment mark formed with alignment light having a wavelength λ

_A that is in the range from about 2σ

_S to about 8σ

_S, and ii) an image of the reticle alignment mark;

an image sensor configured to detect the superimposed image and form therefrom digital superimposed image representative of the superimposed image; and

an image processing unit electrically connected to the image sensor and adapted to receive the digital superimposed image and perform pattern recognition of the digital superimposed image to measure an alignment offset between the wafer and reticle.

19. The alignment system of claim 18, wherein the roughened alignment mark is defined by an alignment mark having a layer formed thereon, wherein the layer includes a roughened upper surface.

20. The alignment system of claim 19, wherein the image processing unit is configured to perform enhanced global alignment.