Semiconductor device and manufacturing method thereof

• US 8,785,241 B2
• Filed: 07/01/2011
• Issued: 07/22/2014
• Est. Priority Date: 07/16/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Sasagawa, Shinya, Nakayama, Hitoshi, Tsubuku, Masashi, Shimada, Daigo
• Primary Examiner(s): Roman, Angel
• Application Number:
  US13/174,960
• Publication Number:
  US 20120012836A1
• Time in Patent Office: 1,117 Days
• Field of Search: 438/104
• US Class Current: 438/104
• CPC Class Codes: H01L 22/14 for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

When a transistor having bottom gate bottom contact structure is manufactured, for example, a conductive layer constituting a source and a drain has a three-layer structure and two-step etching is performed. In the first etching process, an etching method in which the etching rates for at least the second film and the third film are high is employed, and the first etching process is performed until at least the first film is exposed. In the second etching process, an etching method in which the etching rate for the first film is higher than that in the first etching process and the etching rate for a “layer provided below and in contact with the first film” is lower than that in the first etching process is employed. The side wall of the second film is slightly etched when a resist mask is removed after the second etching process.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first wiring layer;

forming an insulating layer covering the first wiring layer;

forming a semiconductor layer over the insulating layer;

forming a first conductive film over the semiconductor layer, a second conductive film over the first conductive film, and a third conductive film over the second conductive film;

forming a resist mask over the third conductive film;

performing etching including at least two steps on the first to third conductive films to form a second wiring layer having a three-layer structure; and

removing the resist mask by a resist stripper after the etching step,

wherein the two-step etching comprises;

a first etching process performed until at least the first conductive film is exposed, and

a second etching process performed under a condition that an etching rate for the first conductive film is higher than the etching rate in the first etching process and an etching rate for the semiconductor layer is lower than the etching rate in the first etching process, and

wherein the resist stripper has properties of corroding the second conductive film.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the first conductive film is thicker than the third conductive film.

3. The method for manufacturing a semiconductor device according to claim 1,

wherein a conductive material for forming the second conductive film has higher conductivity than a conductive material for forming the first conductive film and the third conductive film, and

the second conductive film is thicker than each of the first conductive film and the third conductive film.

4. The method for manufacturing a semiconductor device according to claim 1,

wherein the first conductive film and the third conductive film are titanium films, and

the second conductive film is an aluminum film.

5. A method for manufacturing a semiconductor device, comprising the steps of:

forming a semiconductor layer;

forming a first conductive film over the semiconductor layer, a second conductive film over the first conductive film, and a third conductive film over the second conductive film in this order over the semiconductor layer;

forming a resist mask over the third conductive film;

performing etching including at least two steps on the first to third conductive films using the resist mask to form a first wiring layer having a three-layer structure;

forming an insulating layer covering the first wiring layer and the semiconductor layer;

forming a second wiring layer over the insulating layer to overlap with the semiconductor layer; and

removing the resist mask by a resist stripper after the etching step,

wherein the two-step etching comprises;

a first etching process performed until the first conductive film is exposed, and

a second etching process performed under a condition that an etching rate for the first conductive film is higher than the etching rate in the first etching process and an etching rate for the semiconductor layer is lower than the etching rate in the first etching process, and

wherein the resist stripper has properties of corroding the second conductive film.

6. The method for manufacturing a semiconductor device according to claim 5, wherein the first conductive film is thicker than the third conductive film.

7. The method for manufacturing a semiconductor device according to claim 5,

wherein a conductive material for forming the second conductive film has higher conductivity than a conductive material for forming the first conductive film and the third conductive film, and

the second conductive film is thicker than each of the first conductive film and the third conductive film.

8. The method for manufacturing a semiconductor device according to claim 5,

wherein the first conductive film and the third conductive film are titanium films, and

the second conductive film is an aluminum film.

9. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first wiring layer;

forming an insulating layer covering the first wiring layer;

forming an oxide semiconductor layer over the insulating layer;

forming a first conductive film over the oxide semiconductor layer, a second conductive film over the first conductive film, and a third conductive film over the second conductive film;

forming a resist mask over the third conductive film;

performing etching including at least two steps on the first to third conductive films to form a second wiring layer having a three-layer structure; and

removing the resist mask by a resist stripper after the etching step,

wherein the two-step etching comprises;

a first etching process performed until at least the first conductive film is exposed, and

a second etching process performed under a condition that an etching rate for the first conductive film is higher than the etching rate in the first etching process and an etching rate for the oxide semiconductor layer is lower than the etching rate in the first etching process,

wherein the first etching process is performed using a gas containing more chlorine than fluorine as its main component, and

wherein the second etching process is performed using a gas containing more fluorine than chlorine as its main component.

10. The method for manufacturing a semiconductor device according to claim 9, wherein the first etching process is performed using a mixture gas of a BCl₃ gas and a Cl₂ gas.

11. The method for manufacturing a semiconductor device according to claim 9, wherein the second etching process is performed using a SF₆ gas.

12. The method for manufacturing a semiconductor device according to claim 9, wherein the resist stripper has corrosive properties to the second conductive film.

13. The method for manufacturing a semiconductor device according to claim 9, wherein the first conductive film is thicker than the third conductive film.

14. The method for manufacturing a semiconductor device according to claim 9,

wherein a conductive material for forming the second conductive film has higher conductivity than a conductive material for forming the first conductive film and the third conductive film, and

the second conductive film is thicker than each of the first conductive film and the third conductive film.

15. The method for manufacturing a semiconductor device according to claim 9,

wherein the first conductive film and the third conductive film are titanium films, and

the second conductive film is an aluminum film.

16. The method for manufacturing a semiconductor device according to claim 9, wherein a material of the oxide semiconductor layer is IGZO.

17. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor layer;

forming a first conductive film over the oxide semiconductor layer, a second conductive film over the first conductive film, and a third conductive film over the second conductive film in this order over the oxide semiconductor layer;

forming a resist mask over the third conductive film;

performing etching including at least two steps on the first to third conductive films using the resist mask to form a first wiring layer having a three-layer structure;

forming an insulating layer covering the first wiring layer and the oxide semiconductor layer;

forming a second wiring layer over the insulating layer to overlap with the oxide semiconductor layer; and

removing the resist mask by a resist stripper after the etching step,

wherein the two-step etching comprises;

a first etching process performed until the first conductive film is exposed, and

a second etching process performed under a condition that an etching rate for the first conductive film is higher than the etching rate in the first etching process and an etching rate for the oxide semiconductor layer is lower than the etching rate in the first etching process,

wherein the first etching process is performed using a gas containing more chlorine than fluorine as its main component, and

wherein the second etching process is performed using a gas containing more fluorine than chlorine as its main component.

18. The method for manufacturing a semiconductor device according to claim 17, wherein the first etching process is performed using a mixture gas of a BCl₃ gas and a Cl₂ gas.

19. The method for manufacturing a semiconductor device according to claim 17, wherein the second etching process is performed using a SF₆ gas.

20. The method for manufacturing a semiconductor device according to claim 17, wherein the resist stripper has corrosive properties to the second conductive film.

21. The method for manufacturing a semiconductor device according to claim 17, wherein the first conductive film is thicker than the third conductive film.

22. The method for manufacturing a semiconductor device according to claim 17,

wherein a conductive material for forming the second conductive film has higher conductivity than a conductive material for forming the first conductive film and the third conductive film, and

the second conductive film is thicker than each of the first conductive film and the third conductive film.

23. The method for manufacturing a semiconductor device according to claim 17,

wherein the first conductive film and the third conductive film are titanium films, and

the second conductive film is an aluminum film.

24. The method for manufacturing a semiconductor device according to claim 17, wherein a material of the oxide semiconductor layer is IGZO.