Semiconductor device and method for manufacturing the same

• US 8,785,242 B2
• Filed: 09/13/2011
• Issued: 07/22/2014
• Est. Priority Date: 08/08/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Miyairi, Hidekazu, Miyanaga, Akiharu, Akimoto, Kengo, Shiraishi, Kojiro
• Primary Examiner(s): Mandala, Victor A
• Application Number:
  US13/230,905
• Publication Number:
  US 20110318875A1
• Time in Patent Office: 1,043 Days
• Field of Search: 438/104, 257/78, 257/E21.459, 257/E29.296, 257/43, 257/614
• US Class Current: 438/104
• CPC Class Codes: H01L 29/6675 Amorphous silicon or polysilicon transistors
• CPC Class Codes: H01L 29/66772 Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates H01L29/66666 takes precedence; thin film FinFETs H01L29/66795
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a source electrode layer and a drain electrode layer over a substrate;

forming a buffer layer having n-type conductivity over the source electrode layer and the drain electrode layer;

forming a semiconductor layer over the buffer layer;

forming a gate insulating layer over the semiconductor layer; and

forming a gate electrode layer over the gate insulating layer,

wherein the semiconductor layer and the buffer layer are formed using oxide semiconductor layers,

wherein a carrier concentration of the semiconductor layer is lower than 1×

10¹⁷ atoms/cm³, and a carrier concentration of the buffer layer is 1×

10¹⁸ atoms/cm³ or higher, and

wherein each of the source electrode layer and the drain electrode layer is electrically connected to the semiconductor layer with the buffer layer interposed between the source electrode layer or the drain electrode layer and the semiconductor layer.

2. The method for manufacturing a semiconductor device, according to claim 1, wherein the source electrode layer, the drain electrode layer, the buffer layer, the semiconductor layer, the gate insulating layer, and the gate electrode layer are formed by a sputtering method.

3. The method for manufacturing a semiconductor device, according to claim 1, wherein the semiconductor layer and the gate insulating layer are formed in an oxygen atmosphere.

4. The method for manufacturing a semiconductor device, according to claim 1, wherein the buffer layer is formed in a rare gas atmosphere.

5. The method for manufacturing a semiconductor device, according to claim 1, wherein the buffer layer contains a metal selected from magnesium, aluminum, or titanium.

6. The method for manufacturing a semiconductor device, according to claim 1, wherein the oxide semiconductor layers contain indium, gallium, and zinc.

7. A method for manufacturing a semiconductor device, comprising the steps of:

forming a source electrode layer and a drain electrode layer over a substrate;

forming a buffer layer having n-type conductivity over the source electrode layer and the drain electrode layer;

forming a semiconductor layer over the buffer layer;

forming a gate insulating layer over the semiconductor layer; and

forming a gate electrode layer over the gate insulating layer,

wherein the semiconductor layer and the buffer layer are formed using oxide semiconductor layers,

wherein a carrier concentration of the semiconductor layer is lower than 1×

10¹⁷ atoms/cm³, and a carrier concentration of the buffer layer is 1×

10¹⁸ atoms/cm³ or higher,

wherein each of the source electrode layer and the drain electrode layer is electrically connected to the semiconductor layer with the buffer layer interposed between the source electrode layer or the drain electrode layer and the semiconductor layer; and

wherein the semiconductor layer, the gate insulating layer, and the gate electrode layer are successively formed without exposure to air.

8. The method for manufacturing a semiconductor device, according to claim 7, wherein the source electrode layer, the drain electrode layer, the buffer layer, the semiconductor layer, the gate insulating layer, and the gate electrode layer are formed by a sputtering method.

9. The method for manufacturing a semiconductor device, according to claim 7, wherein the semiconductor layer and the gate insulating layer are formed in an oxygen atmosphere.

10. The method for manufacturing a semiconductor device, according to claim 7, wherein the buffer layer is formed in a rare gas atmosphere.

11. The method for manufacturing a semiconductor device, according to claim 7, wherein the buffer layer contains a metal selected from magnesium, aluminum, or titanium.

12. The method for manufacturing a semiconductor device, according to claim 7, wherein the oxide semiconductor layers contain indium, gallium, and zinc.