Method for manufacturing semiconductor device
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:
- forming a gate electrode layer;
forming a gate insulating layer over the gate electrode layer;
forming an oxide semiconductor layer overlapping with the gate electrode layer with the gate insulating layer interposed therebetween;
forming a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor layer;
forming an insulating layer over the source electrode layer and the drain electrode layer and in contact with the oxide semiconductor layer;
forming an aluminum film in contact with the insulating layer; and
performing an oxygen doping treatment on the insulating layer and the aluminum film, so that at least a portion of the aluminum film is oxidized to be an aluminum oxide film.
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Abstract
A highly reliable semiconductor device which includes a transistor including an oxide semiconductor is provided. In the semiconductor device including a bottom-gate transistor including an oxide semiconductor layer, a stacked layer of an insulating layer and an aluminum film is provided in contact with the oxide semiconductor layer. Oxygen doping treatment is performed in such a manner that oxygen is introduced to the insulating layer and the aluminum film from a position above the aluminum film, whereby a region containing oxygen in excess of the stoichiometric composition is formed in the insulating layer, and the aluminum film is oxidized to form an aluminum oxide film.
130 Citations
16 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode layer; forming a gate insulating layer over the gate electrode layer; forming an oxide semiconductor layer overlapping with the gate electrode layer with the gate insulating layer interposed therebetween; forming a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor layer; forming an insulating layer over the source electrode layer and the drain electrode layer and in contact with the oxide semiconductor layer; forming an aluminum film in contact with the insulating layer; and performing an oxygen doping treatment on the insulating layer and the aluminum film, so that at least a portion of the aluminum film is oxidized to be an aluminum oxide film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode layer; forming a gate insulating layer over the gate electrode layer; performing heat treatment on the gate insulating layer to reduce hydrogen in the gate insulating layer; forming an oxide semiconductor layer overlapping with the gate electrode layer with the gate insulating layer interposed therebetween; forming a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor layer; forming an insulating layer over the source electrode layer and the drain electrode layer and in contact with the oxide semiconductor layer; forming an aluminum film in contact with the insulating layer; and performing an oxygen doping treatment on the insulating layer and the aluminum film, so that at least a portion of the aluminum film is oxidized to be an aluminum oxide film. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei
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Primary Examiner(s)Mandala, Michelle
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Application NumberUS13/711,022Publication NumberTime in Patent Office588 DaysField of Search438/149, 438/688, 257/43US Class Current438/149CPC Class CodesH01L 27/1225 with semiconductor material...H01L 29/66742 Thin film unipolar transistorsH01L 29/66969 of devices having semicondu...H01L 29/7869 having a semiconductor body...H01L 29/78693 the semiconducting oxide be...
