Process to make high-K transistor dielectrics
First Claim
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1. A method of reducing impurities in a high-k dielectric layer, comprising the steps of:
- providing a substrate;
forming a high-k dielectric layer having impurities therein;
the high-k dielectric layer being formed by a process that introduces the impurities into the high-k dielectric layer;
annealing the high-k dielectric layer to reduce the impurities within the high-k dielectric layer, wherein annealing the high-k dielectric layer is performed in an ambient selected from the group consisting of H2, H2/N2, O2/N2, He, and Ar to avoid additional oxidation of the high-k dielectric layer; and
forming a gate layer upon the annealed high-k dielectric layer.
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Abstract
A method of reducing impurities in a high-k dielectric layer comprising the following steps. A substrate is provided. A high-k dielectric layer having impurities is formed over the substrate. The high-k dielectric layer being formed by an MOCVD or an ALCVD process. The high-k dielectric layer is annealed to reduce the impurities within the high-k dielectric layer.
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Citations
18 Claims
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1. A method of reducing impurities in a high-k dielectric layer, comprising the steps of:
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providing a substrate; forming a high-k dielectric layer having impurities therein;
the high-k dielectric layer being formed by a process that introduces the impurities into the high-k dielectric layer;annealing the high-k dielectric layer to reduce the impurities within the high-k dielectric layer, wherein annealing the high-k dielectric layer is performed in an ambient selected from the group consisting of H2, H2/N2, O2/N2, He, and Ar to avoid additional oxidation of the high-k dielectric layer; and forming a gate layer upon the annealed high-k dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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