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Process to make high-K transistor dielectrics

  • US 8,785,272 B2
  • Filed: 09/01/2011
  • Issued: 07/22/2014
  • Est. Priority Date: 04/18/2002
  • Status: Active Grant
First Claim
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1. A method of reducing impurities in a high-k dielectric layer, comprising the steps of:

  • providing a substrate;

    forming a high-k dielectric layer having impurities therein;

    the high-k dielectric layer being formed by a process that introduces the impurities into the high-k dielectric layer;

    annealing the high-k dielectric layer to reduce the impurities within the high-k dielectric layer, wherein annealing the high-k dielectric layer is performed in an ambient selected from the group consisting of H2, H2/N2, O2/N2, He, and Ar to avoid additional oxidation of the high-k dielectric layer; and

    forming a gate layer upon the annealed high-k dielectric layer.

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