Integrated decoupling capacitor employing conductive through-substrate vias
First Claim
1. A method of forming a semiconductor structure comprising:
- forming a capacitor and an laterally-insulated conductive through-substrate connection structure in a semiconductor substrate,wherein said forming said laterally-insulated conductive through-substrate connection structure and said capacitor comprises;
forming a dielectric tubular structure around a first through-substrate cavity formed in said semiconductor substrate;
filling said first through-substrate cavity with a disposable material;
forming an outer electrode by doping a portion of said semiconductor substrate around a second through-substrate cavity;
forming a node dielectric on a surface of said second through-substrate cavity;
removing said disposable material from said first through-substrate cavity within said dielectric tubular structure;
filling said first through-substrate cavity with said dielectric tubular structure with a conductive material; and
forming an inner electrode by filling said second through-substrate cavity with said conductive material.
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Accused Products
Abstract
A capacitor in a semiconductor substrate employs a conductive through-substrate via (TSV) as an inner electrode and a columnar doped semiconductor region as an outer electrode. The capacitor provides a large decoupling capacitance in a small area, and does not impact circuit density or a Si3D structural design. Additional conductive TSV'"'"'s can be provided in the semiconductor substrate to provide electrical connection for power supplies and signal transmission therethrough. The capacitor has a lower inductance than a conventional array of capacitors having comparable capacitance, thereby enabling reduction of high frequency noise in the power supply system of stacked semiconductor chips.
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Citations
18 Claims
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1. A method of forming a semiconductor structure comprising:
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forming a capacitor and an laterally-insulated conductive through-substrate connection structure in a semiconductor substrate, wherein said forming said laterally-insulated conductive through-substrate connection structure and said capacitor comprises; forming a dielectric tubular structure around a first through-substrate cavity formed in said semiconductor substrate; filling said first through-substrate cavity with a disposable material; forming an outer electrode by doping a portion of said semiconductor substrate around a second through-substrate cavity; forming a node dielectric on a surface of said second through-substrate cavity;
removing said disposable material from said first through-substrate cavity within said dielectric tubular structure;
filling said first through-substrate cavity with said dielectric tubular structure with a conductive material; andforming an inner electrode by filling said second through-substrate cavity with said conductive material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming a semiconductor structure comprising:
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providing a semiconductor chip including; providing a semiconductor substrate; forming at least one capacitor embedded in said semiconductor substrate, said at least one capacitor including an inner electrode comprising a conductive through-substrate via (TSV) structure; and forming at least one laterally-insulated conductive through-substrate connection structure, wherein said forming at least one laterally-insulated conductive through-substrate connection structure comprises; forming a dielectric tubular structure around a first through-substrate cavity formed in said semiconductor substrate, filling said first through-substrate cavity with a disposable material, removing said disposable material from said first through-substrate cavity within said dielectric tubular structure before forming said inner electrode of said at least one capacitor, and filling said cavity within said dielectric tubular structure with a conductive material; and electrically connecting said semiconductor chip to a mounting structure employing an array of solder balls. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification