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Integrated decoupling capacitor employing conductive through-substrate vias

  • US 8,785,289 B2
  • Filed: 08/26/2013
  • Issued: 07/22/2014
  • Est. Priority Date: 11/09/2009
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor structure comprising:

  • forming a capacitor and an laterally-insulated conductive through-substrate connection structure in a semiconductor substrate,wherein said forming said laterally-insulated conductive through-substrate connection structure and said capacitor comprises;

    forming a dielectric tubular structure around a first through-substrate cavity formed in said semiconductor substrate;

    filling said first through-substrate cavity with a disposable material;

    forming an outer electrode by doping a portion of said semiconductor substrate around a second through-substrate cavity;

    forming a node dielectric on a surface of said second through-substrate cavity;

    removing said disposable material from said first through-substrate cavity within said dielectric tubular structure;

    filling said first through-substrate cavity with said dielectric tubular structure with a conductive material; and

    forming an inner electrode by filling said second through-substrate cavity with said conductive material.

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