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Semiconductor device and method of manufacturing same

  • US 8,785,919 B2
  • Filed: 01/03/2014
  • Issued: 07/22/2014
  • Est. Priority Date: 04/24/2002
  • Status: Active Grant
First Claim
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1. A display device comprising:

  • a single crystal semiconductor substrate;

    a pixel portion comprising a plurality of pixels;

    a driver circuit of the pixel portion;

    a controller circuit; and

    a D/A converter,wherein each of the plurality of pixels comprises;

    a transistor comprising a channel formation region;

    a first insulating layer over the transistor;

    a first electrode over the first insulating layer;

    a second insulating layer covering a peripheral portion of the first electrode;

    a layer comprising an organic material over the first electrode and the second insulating layer; and

    a second electrode over the layer comprising the organic material,wherein a source or a drain of the transistor is electrically connected to the first electrode,wherein a thickness of the first electrode in a region covered by the second insulating layer is larger than a thickness of the first electrode in a region exposed from the second insulating layer, andwherein the channel formation region is in the single crystal semiconductor substrate, andwherein the driver circuit, the controller circuit and the D/A converter are fabricated on the single crystal semiconductor substrate.

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