Laminate structure including oxide semiconductor thin film layer, and thin film transistor

• US 8,785,927 B2
• Filed: 12/27/2011
• Issued: 07/22/2014
• Est. Priority Date: 12/28/2010
• Status: Active Grant

• Current Assignee: Idemitsu Kosan Company Limited
• Original Assignee: Idemitsu Kosan Company Limited
• Inventors: Tomai, Shigekazu, Matsuzaki, Shigeo, Yano, Koki, Ebata, Kazuaki, Tsuruma, Yuki
• Primary Examiner(s): Fan, Michele
• Application Number:
  US13/881,032
• Publication Number:
  US 20130221351A1
• Time in Patent Office: 938 Days
• Field of Search: 257/43, 257/E29.296, 257/E29.273, 438/104, 438/149, 438/150
• US Class Current: 257/43
• CPC Class Codes: C23C 14/086 of zinc, germanium, cadmium, indium, tin, thallium or bismuth
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02667 Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A stacked layer structure including an oxide layer and an insulating layer, the oxide layer having a carrier concentration of 10¹⁸/cm³ or less and an average crystal diameter of 1 μm or more; and the crystals of the oxide layer being arranged in a columnar shape on the surface of the insulating layer.

Claims

1. A stacked layer structure comprising an oxide layer and an insulating layer,

the oxide layer having a carrier concentration of greater than 10¹³/cm³ to 10¹⁸/cm³ and an average crystal diameter of 1 μ

m to less than 27 μ

m; and

the crystals of the oxide layer being arranged in a columnar shape on the surface of the insulating layer.

2. The stacked layer structure according to claim 1, wherein a material which the oxide layer comprises is selected from indium oxide, Ga-doped indium oxide, Al-doped indium oxide, Zn-doped indium oxide and Sn-doped indium oxide.

3. The stacked layer structure according to claim 2, wherein the Ga-doped indium oxide has an atomic ratio Ga/(Ga+In) of 0.01 to 0.09.

4. The stacked layer structure according to claim 2, wherein the Al-doped indium oxide has an atomic ratio Al/(Al+In) of 0.01 to 0.05.

5. A thin film transistor comprising:

the oxide layer and the insulating layer in the stacked layer structure according to claim 1 as a channel layer and a gate insulating film respectively; and

a protecting film which comprises SiNx being provided on the oxide layer.

6. A display apparatus comprising the thin film transistor according to claim 5.