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Power semiconductor device and a method for forming a semiconductor device

  • US 8,786,012 B2
  • Filed: 07/06/2012
  • Issued: 07/22/2014
  • Est. Priority Date: 07/26/2010
  • Status: Expired due to Fees
First Claim
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1. A power semiconductor device comprising:

  • a semiconductor body comprising;

    an active area and a peripheral area which both define a horizontal main surface of the semiconductor body, wherein the peripheral area forms an edge of the semiconductor body;

    an n-type semiconductor layer which is beneath the main surface in the active area and extends to the main surface in the peripheral area;

    a pn junction which is arranged between the n-type semiconductor layer and the main surface in the active area; and

    at least one trench which extends in the peripheral area from the main surface into the n-type semiconductor layer and comprises a dielectric layer comprising fixed negative charges and being, in a vertical direction which is substantially perpendicular to the main surface, arranged both below and above the pn junction.

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