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Trench transistor

  • US 8,786,013 B2
  • Filed: 07/10/2013
  • Issued: 07/22/2014
  • Est. Priority Date: 09/21/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate defined with a device region;

    a buried heavily doped drain region in the substrate in the device region;

    a gate in a trench in the device region, wherein a channel of the device is disposed on a sidewall of the trench, the buried heavily doped drain region is disposed below the gate and is vertically and laterally displaced away from the channel of the device, wherein a distance from the buried heavily doped drain region to the channel is a drift length LD of the device;

    a drain connector disposed in the trench and is connected to the buried heavily doped drain region, wherein the drain connector is isolated from the gate; and

    a surface heavily doped region adjacent to the gate.

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