Thin film temperature measurement using optical absorption edge wavelength
First Claim
1. A method for determining temperature of a semiconductor film having a measurable optical absorption edge deposited on an optically transparent substrate material having no measurable optical absorption edge, said method comprising the steps of:
- a) providing an optically transparent substrate of material having no measurable optical absorption edge,b) depositing a film of a semiconductor material having a measurable optical absorption edge and a measurable thickness on the substrate,c) interacting light with the film deposited on the substrate to produce diffusely scattered light,d) collecting the diffusely scattered light from the film,e) producing a spectra indicating optical absorption of the film based on the diffusely scattered light from the film,f) determining a thickness of the film,g) determining the optical absorption edge wavelength of the film based on the spectra, andh) determining a temperature of the film at the film thickness as a function of the film thickness and the optical absorption edge wavelength.
1 Assignment
0 Petitions
Accused Products
Abstract
A technique for determining the temperature of a sample including a semiconductor film 20 having a measurable optical absorption edge deposited on a transparent substrate 22 of material having no measurable optical absorption edge, such as a GaN film 20 deposited on an Al2O3 substrate 22 for blue and white LEDs. The temperature is determined in realtime as the film 20 grows and increases in thickness. A spectra based on the diffusely scattered light from the film 20 is produced at each incremental thickness. A reference division is performed on each spectra to correct for equipment artifacts. The thickness of the film 20 and an optical absorption edge wavelength value are determined from the spectra. The temperature of the film 20 is determined as a function of the optical absorption edge wavelength and the thickness of the film 20 using the spectra, a thickness calibration table, and a temperature calibration table.
26 Citations
22 Claims
-
1. A method for determining temperature of a semiconductor film having a measurable optical absorption edge deposited on an optically transparent substrate material having no measurable optical absorption edge, said method comprising the steps of:
-
a) providing an optically transparent substrate of material having no measurable optical absorption edge, b) depositing a film of a semiconductor material having a measurable optical absorption edge and a measurable thickness on the substrate, c) interacting light with the film deposited on the substrate to produce diffusely scattered light, d) collecting the diffusely scattered light from the film, e) producing a spectra indicating optical absorption of the film based on the diffusely scattered light from the film, f) determining a thickness of the film, g) determining the optical absorption edge wavelength of the film based on the spectra, and h) determining a temperature of the film at the film thickness as a function of the film thickness and the optical absorption edge wavelength. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
-
-
20. An apparatus for determining an optical absorption edge of a semiconductor film having a measurable optical absorption edge deposited on an optically transparent material having no measurable optical absorption edge comprising:
-
a detector for collecting diffusely scattered light from a film of a semiconductor material having a measurable optical absorption edge and a measurable thickness after it has been deposited on an optically transparent substrate of material having no measurable optical absorption edge, a spectrometer for producing a spectra from the diffusely scattered light, and a software program for determining a temperature of the film as a function of film thickness and optical absorption edge wavelength of the film using spectra produced by the spectrometer.
-
-
21. A system for determining an optical absorption edge of a semiconductor film having a measurable optical absorption edge deposited on an optically transparent material having no measurable optical absorption edge comprising:
-
a substrate of optically transparent material having no measurable optical absorption edge, a film of a semiconductor material having a measurable optical absorption edge and a measurable thickness deposited on said substrate, a means for depositing the film on said substrate, a light source for interacting light with said film deposited on said substrate, a detector for collecting diffusely scattered light from said film, a spectrometer for producing a spectra from the diffusely scattered light, and a software program for determining a temperature of the film as a function of film thickness and optical absorption edge wavelength using spectra produced by the spectrometer. - View Dependent Claims (22)
-
Specification