Flash memory device error correction code controllers and related methods and memory systems
First Claim
1. An error correction code (ECC) controller for a memory device having a memory cell array that stores M-bit data per memory cell of a main cell area of the memory cell array, M being a positive integer equal to or greater than 2, the ECC controller comprising:
- an encoder that is configured to generate first ECC data in response to input data that is stored in the main cell area of the memory cell array using a first error correction scheme and that is configured to generate second ECC data in response to the input data using a second error correction scheme,wherein the first error correction scheme operates at a higher speed than the second error correction scheme, and wherein the second error correction scheme is capable of correcting a greater number of errors than the first error correction scheme.
0 Assignments
0 Petitions
Accused Products
Abstract
An ECC controller for a flash memory device storing M-bit data (M: a positive integer equal to or greater than 2) includes an encoder and a decoder. The encoder generates first ECC data for input data to be stored in the flash memory device using a first error correction scheme and generates second ECC data for the input data using a second error correction scheme. The input data, the first ECC data, and the second ECC data are stored in the flash memory device. The decoder calculates the number of errors in data read from the flash memory device and corrects the errors in the read data using one of the first ECC data and the second ECC data selectively based on the number of the errors.
-
Citations
21 Claims
-
1. An error correction code (ECC) controller for a memory device having a memory cell array that stores M-bit data per memory cell of a main cell area of the memory cell array, M being a positive integer equal to or greater than 2, the ECC controller comprising:
-
an encoder that is configured to generate first ECC data in response to input data that is stored in the main cell area of the memory cell array using a first error correction scheme and that is configured to generate second ECC data in response to the input data using a second error correction scheme, wherein the first error correction scheme operates at a higher speed than the second error correction scheme, and wherein the second error correction scheme is capable of correcting a greater number of errors than the first error correction scheme. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A method for error correction encoding first data that is to be stored in a non-volatile memory device, the method comprising:
-
generating first error correction code (ECC) data for the first data using a first error correction scheme; generating second error correction code (ECC) data for the first data using a second error correction scheme; storing the first data, the first ECC data, and the second ECC in the non-volatile memory device; reading the first data from the non-volatile memory device; selecting one of the first ECC data or the second ECC data to correct the errors in the first data based on whether a number of errors in the first data is less than a threshold number of errors; and correcting the errors in the first data using the selected one of the first ECC data or the second ECC data. - View Dependent Claims (12, 13, 14)
-
-
15. A memory system comprising:
-
a flash memory device that is configured to store M-bit data, M being a positive integer equal to or greater than 2; and a memory controller that is configured to control the flash memory device, the memory controller comprising an encoder that is configured to generate first ECC data in response to input data that is stored in the flash memory device by using a first error correction scheme and that is configured to generate second ECC data in response to the input data by using a second error correction scheme, the input data, the first ECC data, and the second ECC data being stored in the flash memory device. - View Dependent Claims (16, 17, 18, 19, 20, 21)
-
Specification