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Doping of semiconductor fin devices

  • US 8,790,970 B2
  • Filed: 06/05/2006
  • Issued: 07/29/2014
  • Est. Priority Date: 04/29/2003
  • Status: Active Grant
First Claim
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1. A method of doping semiconductor fins of multiple-gate transistors, the method comprising:

  • providing a semiconductor structure comprising of a plurality of semiconductor fins overlying an insulator layer, each fin having a gate dielectric overlying a portion of that semiconductor fin, and a gate electrode overlying said gate dielectric, each of the semiconductor fins having a channel region of a first conductivity type disposed beneath the gate electrode, the channel region located in a top surface, a first sidewall surface, and a second sidewall surface of the semiconductor fin; and

    forming a source region and/or drain region comprising;

    implanting dopant ions of an opposite second conductivity type in the first sidewall surface and in the top surface at an angle α

    to dope along the first sidewall surface and along the top surface, the angle α

    being between 26 degrees and about 63 degrees with respect to the normal of the top surface and being in a first plane perpendicular to the first sidewall surface, the normal of the top surface being in the first plane; and

    implanting dopant ions of the second conductivity type in the second sidewall surface and in the top surface at an angle β

    to dope along the second sidewall surface and along the top surface, the angle β

    being between 26 degrees and about 63 degrees with respect to the normal of the top surface and being in a second plane perpendicular to the second sidewall surface, the normal of the top surface being in the second plane.

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