Stamp having nanoscale structure and applications therefore in light-emitting device

• US 8,791,029 B2
• Filed: 08/12/2008
• Issued: 07/29/2014
• Est. Priority Date: 08/13/2007
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Epistar Corporation (Ennostar, Inc.)
• Inventors: Yao, Chiu-Lin, Hsu, Ta-Cheng, Hsieh, Min-Hsun
• Primary Examiner(s): CHEN, JACK S J
• Application Number:
  US12/222,548
• Publication Number:
  US 20090045435A1
• Time in Patent Office: 2,177 Days
• Field of Search: 438/32, 438/46, 438/745
• US Class Current: 438/745
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A stamp having a nanoscale structure and a manufacturing method thereof are disclosed. The stamp includes a substrate, a buffer layer, and a nanoscale stamp layer. The method comprises forming a buffer layer on the substrate, and forming a stamp layer having a nanoscale structure on the buffer layer.

Claims

1. A method of forming a nanoscale stamp structure comprising the steps of:

forming a substrate;

forming a buffer layer on the substrate; and

forming a stamp layer directly on entire one surface of the buffer layer, wherein the surface of the stamp layer has a nanoscale structure and the material of the stamp layer is un-doped gallium nitride;

and wherein the step of forming the nanoscale structure on the surface of the stamp layer on the buffer layer comprises etching the stamp layer by KOH for 3 minutes to form the surface of the stamp layer in a serrated shape or triangle shape ranging in size from 10 nm to 1,000 nm and with a period in range of 20 nm to 2,000 nm.

2. A method of forming a nanoscale stamp structure comprising the steps of:

forming a substrate;

forming a buffer layer on the substrate; and

forming a stamp layer on the buffer layer, wherein the stamp layer is a single layer and the surface of the stamp layer has a nonascale structure and the material of the stamp layer is un-doped gallium nitride; and

wherein the step of forming the nanoscale structure on the surface of the stamp layer on the buffer layer comprises etching the stamp layer by KOH for 3 minutes to form the surface of the stamp layer in a serrated shape or triangle shape ranging in size from 10 nm to 1,000 nm and with a period in range of 20 nm to 2,000 nm.

3. A method of forming a nanoscale stamp structure comprising the steps of:

forming a substrate;

forming an un-doped buffer layer on the substrate; and

forming a stamp layer on the un-doped buffer layer, wherein the surface of the stamp layer has a nanoscale structure and the material of the stamp layer is un-doped gallium nitride; and

wherein the step of forming the nanoscale structure on the surface of the stamp layer on the buffer layer comprises etching the stamp layer by KOH for 3 minutes to form the surface of the stamp layer in a serrated shape or triangle shape ranging in size from 10 nm to 1,000 nm and with a period in range of 20 nm to 2,000 nm.