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Stamp having nanoscale structure and applications therefore in light-emitting device

  • US 8,791,029 B2
  • Filed: 08/12/2008
  • Issued: 07/29/2014
  • Est. Priority Date: 08/13/2007
  • Status: Active Grant
First Claim
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1. A method of forming a nanoscale stamp structure comprising the steps of:

  • forming a substrate;

    forming a buffer layer on the substrate; and

    forming a stamp layer directly on entire one surface of the buffer layer, wherein the surface of the stamp layer has a nanoscale structure and the material of the stamp layer is un-doped gallium nitride;

    and wherein the step of forming the nanoscale structure on the surface of the stamp layer on the buffer layer comprises etching the stamp layer by KOH for 3 minutes to form the surface of the stamp layer in a serrated shape or triangle shape ranging in size from 10 nm to 1,000 nm and with a period in range of 20 nm to 2,000 nm.

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