Method of preparing organic light-emitting device, substrate for transiting inorganic layer, and organic light-emitting device

• US 8,791,452 B2
• Filed: 09/07/2012
• Issued: 07/29/2014
• Est. Priority Date: 03/05/2012
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Park, Jin-Woo
• Primary Examiner(s): Tran, Long K
• Assistant Examiner(s): Tran, Dzung
• Application Number:
  US13/607,638
• Publication Number:
  US 20130228754A1
• Time in Patent Office: 690 Days
• Field of Search: 257/9, 257/40, 257/79
• US Class Current: 257/40
• CPC Class Codes: C03C 17/42 at least one coating of an organic material and at least one non-metal coating
• CPC Class Codes: C03C 2218/34 Masking
• CPC Class Codes: C03C 27/10 with the aid of adhesive specially adapted for that purpose
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 29/06 characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
• CPC Class Codes: H01L 29/08 with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/8445 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
• CPC Class Codes: H10K 77/10 Substrates, e.g. flexible substrates
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y10T 156/10 Methods of surface bonding and/or assembly therefor
• CPC Class Codes: Y10T 428/31678 Of metal

Abstract

A method of preparing an organic light-emitting device having excellent sealing characteristics against external environment and flexibility.

Claims

1. A method of preparing an organic light-emitting device, the method comprising:

forming at least one pre-inorganic layer comprising a low temperature viscosity transition (LVT) inorganic material on a second substrate;

forming at least one organic emission unit on a first substrate;

applying an adhesive to edge portions of at least one of the second substrate or the first substrate;

bonding the second substrate and the first substrate using the adhesive such that the pre-inorganic layer and the organic emission unit face each other; and

transiting the pre-inorganic layer to an inorganic layer to cover the organic emission unit and to contact the first substrate by performing a healing process on the pre-inorganic layer at a temperature greater than a viscosity transition temperature of the LVT inorganic material,

wherein the organic emission unit is entirely contained between the inorganic layer and the first substrate, and

wherein the inorganic layer is spaced from the adhesive.

2. The method of claim 1, further comprising separating the inorganic layer from the second substrate.

3. The method of claim 1, wherein the second substrate comprises glass, plastic, or metal.

4. The method of claim 1, wherein the forming of the pre-inorganic layer comprises:

applying a paste comprising a powder of the LVT inorganic material to the second substrate; and

sintering the paste.

5. The method of claim 1, wherein the forming of the pre-inorganic layer comprises:

applying a dispersion comprising a powder of the LVT inorganic material to the second substrate by spraying; and

heat-treating the dispersion.

6. The method of claim 1, wherein the bonding of the second substrate and the first substrate is performed in a vacuum, under a reduced pressure, or in an inert atmosphere in which an influence of moisture or oxygen is substantially eliminated, so that the space between the second substrate and the first substrate is substantially maintained in a vacuum.

7. The method of claim 1, wherein the viscosity transition temperature of the LVT inorganic material is a minimum temperature capable of providing fluidity to the LVT inorganic material.

8. The method of claim 1, wherein the viscosity transition temperature of the LVT inorganic material is less than a minimum value of denaturation temperatures of materials contained in the organic emission unit.

9. The method of claim 1, wherein the LVT inorganic material comprises a tin oxide.

10. The method of claim 9, wherein the LVT inorganic material comprises at least one selected from the group consisting of a phosphorus oxide, a boron phosphate, a tin fluoride, a niobium oxide, and a tungsten oxide.

11. The method of claim 1, wherein the LVT inorganic material comprises SnO;

SnO and P₂O₅;

SnO and BPO₄;

SnO, SnF₂, and P₂O₅;

SnO, SnF₂, P₂O₅, and NbO;

or SnO, SnF₂, P₂O₅, and WO₃.

12. The method of claim 1, wherein the transiting is performed by heat-treating the pre-inorganic layer at a temperature between the viscosity transition temperature of the LVT inorganic material and a minimum value of denaturation temperatures of materials contained in an organic emission layer of the organic emission unit.

13. The method of claim 1, wherein the transiting comprises heat-treating the pre-inorganic layer at a temperature between about 80°

C. and about 132°

C. for about 1 to 3 hours.

14. The method of claim 1, wherein the transiting is performed in a vacuum or in an inert gas atmosphere.

15. The method of claim 1, wherein the transiting comprises scanning the pre-inorganic layer while irradiating the pre-inorganic layer with a laser beam.

16. The method of claim 1, further comprising forming at least one organic layer between the second substrate and the pre-inorganic layer.

17. The method of claim 2, further comprising forming at least one organic layer between the second substrate and the pre-inorganic layer,

wherein the separating of the inorganic layer from the second substrate comprises separating the organic layer from the second substrate by irradiating the organic layer with a laser beam.

18. The method of claim 16, wherein the organic layer covers at least one portion of the inorganic layer.

19. A method of preparing an organic light emitting device, the method comprising:

forming at least one pre-inorganic layer comprising a low temperature viscosity transition (LVT) inorganic material on a second substrate;

forming at least one organic emission unit on a first substrate;

forming at least one first organic layer on both the first substrate and the organic emission unit to cover the organic emission unit;

applying an adhesive to edge portions of at least one of the second substrate or the first substrate;

bonding the second substrate and the first substrate using the adhesive such that the pre-inorganic layer and the first organic layer face each other; and

transiting the pre-inorganic layer to an inorganic layer to cover the first organic layer and to contact the first substrate by performing a healing process on the pre-inorganic layer at a temperature greater than a viscosity transition temperature of the LVT inorganic material,

wherein the organic emission unit is entirely contained between the inorganic layer and the first substrate, and

wherein the inorganic layer is spaced from the adhesive.

20. The method of claim 19, further comprising separating the inorganic layer from the second substrate.

21. The method of claim 19, wherein the second substrate comprises glass, plastic, or metal.

22. The method of claim 19, wherein the forming of the first organic layer comprises providing a curable precursor, and curing the curable precursor.

23. The method of claim 22, wherein the providing of the curable precursor is performed by using a flash evaporator.

24. The method of claim 22, wherein the curing of the curable precursor is performed by using UV rays, infrared rays, and laser beams.

25. The method of claim 19, wherein the forming of the pre-inorganic layer comprises:

applying a paste comprising a powder of the LVT inorganic material to the second substrate; and

sintering the paste.

26. The method of claim 19, wherein the forming of the pre-inorganic layer comprises:

applying a dispersion comprising a powder of the LVT inorganic material to the second substrate by spraying the powder; and

heat-treating the dispersion.

27. The method of claim 19, wherein the bonding of the second substrate and the first substrate is performed in a vacuum, under a reduced pressure, or in an inert atmosphere in which an influence of moisture or oxygen is substantially eliminated so that the space between the second substrate and the first substrate is substantially maintained in a vacuum.

28. The method of claim 19, wherein the viscosity transition temperature of the LVT inorganic material is a minimum temperature capable of providing fluidity to the LVT inorganic material.

29. The method of claim 19, wherein the viscosity transition temperature of the LVT inorganic material is less than a minimum value of denaturation temperatures of materials contained in the organic emission unit.

30. The method of claim 19, wherein the LVT inorganic material comprises a tin oxide.

31. The method of claim 30, wherein the LVT inorganic material comprises at least one selected from the group consisting of a phosphorus oxide, a boron phosphate, a tin fluoride, a niobium oxide, and a tungsten oxide.

32. The method of claim 19, wherein the LVT inorganic material comprises SnO;

SnO and P₂O₅;

SnO and BPO₄;

SnO, SnF₂, and P₂O₅;

SnO, SnF₂, P₂O₅, and NbO;

or SnO, SnF₂, P₂O₅, and WO₃.

33. The method of claim 19, wherein the transiting is performed by heat-treating the pre-inorganic layer at a temperature between the viscosity transition temperature of the LVT inorganic material and a minimum value of denaturation temperatures of materials contained in an organic emission layer of the organic emission unit.

34. The method of claim 19, wherein the transiting comprises heat-treating the pre-inorganic layer at a temperature between about 80°

C. and about 132°

C. for about 1 to 3 hours.

35. The method of claim 19, wherein the transiting is performed in a vacuum or in an inert gas atmosphere.

36. The method of claim 19, the transiting comprises scanning the pre-inorganic layer while irradiating the pre-inorganic layer with a laser beam.

37. The method of claim 19, further comprising forming at least one second organic layer between the second substrate and the pre-inorganic layer.

38. The method of claim 20, further comprising forming at least one second organic layer between the second substrate and the pre-inorganic layer,

wherein the separating the inorganic layer from the second substrate comprises separating the second organic layer from the second substrate by irradiating the second organic layer with a laser beam.

39. The method of claim 37, wherein the second organic layer covers at least one portion of the inorganic layer.