Non-linear element, display device including non- linear element, and electronic device including display device
First Claim
Patent Images
1. A protection circuit comprising:
- a resistor;
a diode;
a first power supply line;
a second power supply line electrically connected to a first terminal of the resistor; and
a signal line electrically connected to a first terminal of the diode and a second terminal of the resistor;
wherein a second terminal of the diode is electrically connected to one of the first power supply line and the second power supply line,wherein the diode is a diode-connected transistor including an oxide semiconductor layer including In—
Ga—
Zn—
O based oxide semiconductor, andwherein a hydrogen concentration in the oxide semiconductor layer is less than or equal to 5×
1019/cm3.
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Accused Products
Abstract
A non-linear element, such as a diode, in which an oxide semiconductor is used and a rectification property is favorable is provided. In a thin film transistor including an oxide semiconductor in which the hydrogen concentration is less than or equal to 5×1019/cm3, the work function φms of a source electrode in contact with the oxide semiconductor, the work function φmd of a drain electrode in contact with the oxide semiconductor, and electron affinity χ of the oxide semiconductor satisfy φms≦χ<φmd. By electrically connecting a gate electrode and the drain electrode of the thin film transistor, a non-linear element with a more favorable rectification property can be achieved.
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Citations
24 Claims
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1. A protection circuit comprising:
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a resistor; a diode; a first power supply line; a second power supply line electrically connected to a first terminal of the resistor; and a signal line electrically connected to a first terminal of the diode and a second terminal of the resistor; wherein a second terminal of the diode is electrically connected to one of the first power supply line and the second power supply line, wherein the diode is a diode-connected transistor including an oxide semiconductor layer including In—
Ga—
Zn—
O based oxide semiconductor, andwherein a hydrogen concentration in the oxide semiconductor layer is less than or equal to 5×
1019/cm3. - View Dependent Claims (2, 3)
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4. A protection circuit comprising:
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a resistor; a first power supply line; a second power supply line electrically connected to a first terminal of the resistor; a signal line electrically connected to a second terminal of the resistor; a first transistor a gate electrode of which is electrically connected to one of a source electrode and a drain electrode of the first transistor; and a second transistor a gate electrode of which is electrically connected to one of a source electrode and a drain electrode of the second transistor; wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to the first power supply line, wherein the one of the source electrode and the drain electrode of the first transistor, the other of the source electrode and the drain electrode of the second transistor are electrically connected to the signal line, and wherein the one of the source electrode and the drain electrode of the second transistor is electrically connected to the second power supply line, wherein each of the first transistor and the second transistor comprises an oxide semiconductor layer including In—
Ga—
Zn—
O based oxide semiconductor, andwherein a hydrogen concentration in the oxide semiconductor layer is less than or equal to 5×
1019/cm3. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11, 12)
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13. A protection circuit comprising:
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a resistor; a first line electrically connected a first terminal of the resistor; a second line electrically connected to a second terminal of the resistor; a first transistor a gate electrode of which is electrically connected to one of a source electrode and a drain electrode of the first transistor; a second transistor a gate electrode of which is electrically connected to one of a source electrode and a drain electrode of the second transistor; a third transistor a gate electrode of which is electrically connected to one of a source electrode and a drain electrode of the third transistor; a fourth transistor a gate electrode of which is electrically connected to one of a source electrode and a drain electrode of the fourth transistor; a first power supply line electrically connected to the one of the source electrode and the drain electrode of the first transistor and to the one of the source electrode and the drain electrode of the second transistor; and a second power supply line electrically connected to the other of the source electrode and the drain electrode of the third transistor and the other of the source electrode and the drain electrode of the fourth transistor; wherein the other of the source electrode and the drain electrode of the first transistor and the one of the source electrode and the drain electrode of the third transistor are electrically connected to the first terminal of the resistor, and wherein the other of the source electrode and the drain electrode of the second transistor and the one of the source electrode and the drain electrode of the fourth transistor are electrically connected to the second terminal of the resistor, wherein each of the first transistor, the second transistor, the third transistor, and the fourth transistor comprises an oxide semiconductor layer including In—
Ga—
Zn—
O based oxide semiconductor, andwherein a hydrogen concentration in the oxide semiconductor layer is less than or equal to 5×
1019/cm3. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. A protection circuit comprising:
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a resistor; a first line electrically connected a first terminal of the resistor; a second line electrically connected to a second terminal of the resistor; a first diode an anode of which is electrically connected to the first terminal of the resistor; a second diode an anode of which is electrically connected to the second terminal of the resistor; wherein each of the first diode and the second diode includes an electrode and an oxide semiconductor layer including In—
Ga—
Zn—
O based oxide semiconductor, andwherein a hydrogen concentration in the oxide semiconductor layer is less than or equal to 5×
1019/cm3. - View Dependent Claims (21, 22, 23)
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24. A protection circuit comprising:
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a resistor; and a transistor electrically connected to the resistor, wherein a gate electrode of the transistor is electrically connected to one of a source electrode and a drain electrode of the transistor, wherein the transistor comprises an oxide semiconductor layer including In—
Ga—
Zn—
O based oxide semiconductor, andwherein a hydrogen concentration in the oxide semiconductor layer is less than or equal to 5×
1019/cm3.
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Specification