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GaN containing optical devices and method with ESD stability

  • US 8,791,499 B1
  • Filed: 05/24/2010
  • Issued: 07/29/2014
  • Est. Priority Date: 05/27/2009
  • Status: Expired due to Fees
First Claim
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1. An optical device comprising:

  • a gallium nitride substrate structure, the gallium nitride substrate structure including a surface region;

    an epitaxial layer overlying the surface region;

    a p-n junction formed within a portion of the epitaxial layer;

    one or more plane or line defects spatially configured in a manner to be intersecting one or more spatial portions of the p-n junction, the one or more plane or line defects being characterized by a spatial density of less than 1×

    104 cm

    2
    ; and

    an electrostatic discharge voltage rating of at least 7 kvolts;

    wherein the surface region is characterized by an m-plane that is angled ranging from about 80 degrees to about 100 degrees from the polar orientation of the c plane toward an (h k l) plane wherein l is 0 and at least one of h and k is non-zero.

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