GaN containing optical devices and method with ESD stability
First Claim
Patent Images
1. An optical device comprising:
- a gallium nitride substrate structure, the gallium nitride substrate structure including a surface region;
an epitaxial layer overlying the surface region;
a p-n junction formed within a portion of the epitaxial layer;
one or more plane or line defects spatially configured in a manner to be intersecting one or more spatial portions of the p-n junction, the one or more plane or line defects being characterized by a spatial density of less than 1×
104 cm−
2; and
an electrostatic discharge voltage rating of at least 7 kvolts;
wherein the surface region is characterized by an m-plane that is angled ranging from about 80 degrees to about 100 degrees from the polar orientation of the c plane toward an (h k l) plane wherein l is 0 and at least one of h and k is non-zero.
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Abstract
An improved laser light emitting diode. The device has a gallium nitride substrate structure, which includes a surface region. The device also has an epitaxial layer overlying the surface region and a p-n junction formed within a portion of the epitaxial layer. In a preferred embodiment, the device also has one or more plane or line defects spatially configured in a manner to be free from intersecting the p-n junction, the one or more plane or line defects being at least 1×106 cm−2.
280 Citations
9 Claims
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1. An optical device comprising:
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a gallium nitride substrate structure, the gallium nitride substrate structure including a surface region; an epitaxial layer overlying the surface region; a p-n junction formed within a portion of the epitaxial layer; one or more plane or line defects spatially configured in a manner to be intersecting one or more spatial portions of the p-n junction, the one or more plane or line defects being characterized by a spatial density of less than 1×
104 cm−
2; andan electrostatic discharge voltage rating of at least 7 kvolts; wherein the surface region is characterized by an m-plane that is angled ranging from about 80 degrees to about 100 degrees from the polar orientation of the c plane toward an (h k l) plane wherein l is 0 and at least one of h and k is non-zero. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification