Semiconductor device

• US 8,791,516 B2
• Filed: 05/16/2012
• Issued: 07/29/2014
• Est. Priority Date: 05/20/2011
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Ohshima, Kazuaki
• Primary Examiner(s): GREEN, TELLY D
• Application Number:
  US13/473,014
• Publication Number:
  US 20120292616A1
• Time in Patent Office: 804 Days
• Field of Search: 326/102, 326/41, 326/38, 257/43, 257/296, 257/57, 257/59
• US Class Current: 257/296
• CPC Class Codes: H01L 27/0605 integrated circuits made of compound material, e.g. AIIIBV
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/092 complementary MIS field-effect transistors
• CPC Class Codes: H01L 27/105 including field-effect components
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H03K 19/0013 in field effect transistor circuits
• CPC Class Codes: H03K 19/1776 for memories
• CPC Class Codes: H03K 19/17772 for powering on or off
• CPC Class Codes: H10B 12/00 Dynamic random access memory [DRAM] devices

Abstract

A semiconductor device having a novel structure is provided. The semiconductor device includes a first p-type transistor, a second n-type transistor, a third transistor, and a fourth transistor. One of a source and a drain of the third transistor is connected to a wiring supplying first potential, and the other is connected to one of a source and a drain of the first transistor. One of a source and a drain of the second transistor is connected to the other of the source and the drain of the first transistor, and the other is connected to one of a source and a drain of the fourth transistor. The other of the source and the drain of the fourth transistor is connected to a wiring supplying second potential lower than the first potential. An oxide semiconductor material is used in channel formation regions of the third transistor and the fourth transistor.

Claims

1. A semiconductor device comprising:

an inverter, the inverter comprising a first transistor having p-type conductivity and a second transistor having an n-type conductivity;

a third transistor; and

a fourth transistor,

wherein a gate of the first transistor is electrically connected to a gate of the second transistor,

wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,

wherein one of a source and a drain of the third transistor is electrically connected to the other of the source and the drain of the first transistor,

wherein the other of the source and the drain of the third transistor is electrically connected to a wiring having a function of supplying first potential,

wherein a gate of the third transistor is electrically connected to a gate of the fourth transistor,

wherein one of a source and a drain of the fourth transistor is electrically connected to the other of the source and the drain of the second transistor,

wherein the other of the source and the drain of the fourth transistor is electrically connected to a wiring having a function of supplying second potential lower than the first potential, and

wherein the third transistor, and the fourth transistor comprise an oxide semiconductor.

2. The semiconductor device according to claim 1,

wherein the first transistor and the second transistor are provided over a substrate or in the substrate, and

wherein the third transistor and the fourth transistor are provided over the first transistor and the second transistor.

3. The semiconductor device according to claim 1, wherein the oxide semiconductor is an In—

Ga—

Zn-based oxide semiconductor or an In—

Sn—

Zn-based oxide semiconductor.

4. A semiconductor device comprising:

an inverter, the inverter comprising a first transistor having p-type conductivity and a second transistor having an n-type conductivity;

a third transistor;

a fourth transistor;

a fifth transistor;

a capacitor; and

a resistor,

wherein a gate of the first transistor is electrically connected to a gate of the second transistor,

wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,

wherein one of a source and a drain of the third transistor is electrically connected to the other of the source and the drain of the first transistor,

wherein the other of the source and the drain of the third transistor is electrically connected to a wiring having a function of supplying first potential,

wherein a gate of the third transistor is electrically connected to a first terminal of the capacitor, one of a source and a drain of the fifth transistor, and a first terminal of the resistor,

wherein one of a source and a drain of the fourth transistor is electrically connected to the other of the source and the drain of the second transistor,

wherein the other of the source and the drain of the fourth transistor is electrically connected to a wiring having a function of supplying second potential lower than the first potential,

wherein a gate of the fourth transistor is electrically connected to a second terminal of the capacitor and a first wiring,

wherein the other of the source and the drain of the fifth transistor is electrically connected to the wiring having the function of supplying the first potential,

wherein a gate of the fifth transistor is electrically connected to a second wiring, and

wherein the third transistor, the fourth transistor, and the fifth transistor comprise an oxide semiconductor.

5. The semiconductor device according to claim 4,

wherein the first transistor and the second transistor are provided over a substrate or in the substrate, and

wherein the third transistor and the fourth transistor are provided over the first transistor and the second transistor.

6. The semiconductor device according to claim 4,

wherein the first transistor and the second transistor are provided over a substrate or in the substrate,

wherein the third transistor and the fourth transistor are provided over the first transistor and the second transistor, and

wherein the capacitor is provided over the third transistor and the fourth transistor.

7. The semiconductor device according to claim 4, wherein the oxide semiconductor is an In—

Ga—

Zn-based oxide semiconductor or an In—

Sn—

Zn-based oxide semiconductor.

8. A semiconductor device comprising:

an inverter, the inverter comprising a first transistor having p-type conductivity and a second transistor having an n-type conductivity;

a third transistor;

a fourth transistor;

a fifth transistor;

a sixth transistor; and

a capacitor,

wherein a gate of the first transistor is electrically connected to a gate of the second transistor,

wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,

wherein one of a source and a drain of the third transistor is electrically connected to the other of the source and the drain of the first transistor,

wherein the other of the source and the drain of the third transistor is electrically connected to a wiring having a function of supplying first potential,

wherein a gate of the third transistor is electrically connected to a first terminal of the capacitor, one of a source and a drain of the fifth transistor and one of a source and a drain of the sixth transistor,

wherein one of a source and a drain of the fourth transistor is electrically connected to the other of the source and the drain of the second transistor,

wherein the other of the source and the drain of the fourth transistor is electrically connected to a wiring having a function of supplying second potential lower than the first potential,

wherein a gate of the fourth transistor is electrically connected to a second terminal of the capacitor and a first wiring,

wherein the other of the source and the drain of the fifth transistor is electrically connected to the wiring having the function of supplying the first potential,

wherein a gate of the fifth transistor is electrically connected to a second wiring,

wherein the other of the source and the drain of the sixth transistor is electrically connected to the wiring having the function of supplying the second potential,

wherein a gate of the sixth transistor is electrically connected to a third wiring, and

wherein the third transistor, the fourth transistor, the fifth transistor, and the sixth transistor comprise an oxide semiconductor.

9. The semiconductor device according to claim 8,

wherein the first transistor and the second transistor are provided over a substrate or in the substrate, and

wherein the third transistor and the fourth transistor are provided over the first transistor and the second transistor.

10. The semiconductor device according to claim 8,

wherein the first transistor and the second transistor are provided over a substrate or in the substrate,

wherein the third transistor and the fourth transistor are provided over the first transistor and the second transistor, and

wherein the capacitor is provided over the third transistor and the fourth transistor.

11. The semiconductor device according to claim 8, wherein the oxide semiconductor is an In—

Ga—

Zn-based oxide semiconductor or an In—

Sn—

Zn-based oxide semiconductor.

12. A semiconductor device comprising:

a first inverter, the first inverter comprising a first p-type transistor and a second n-type transistor;

a third transistor having p-type conductivity;

a fourth transistor, and

a second inverter,

wherein a gate of the first transistor is electrically connected to a gate of the second transistor,

wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,

wherein one of a source and a drain of the third transistor is electrically connected to the other of the source and the drain of the first transistor,

wherein the other of the source and the drain of the third transistor is electrically connected to a wiring having a function of supplying first potential,

wherein a gate of the third transistor is electrically connected to an output terminal of the second inverter,

wherein one of a source and a drain of the fourth transistor is electrically connected to the other of the source and the drain of the second transistor,

wherein the other of the source and the drain of the fourth transistor is electrically connected to a wiring having a function of supplying second potential lower than the first potential,

wherein a gate of the fourth transistor is electrically connected to an input terminal of the second inverter and a first wiring, and

wherein the fourth transistor comprise an oxide semiconductor.

13. The semiconductor device according to claim 12, wherein the oxide semiconductor is an In—

Ga—

Zn-based oxide semiconductor or an In—

Sn—

Zn-based oxide semiconductor.

14. A semiconductor device comprising:

an inverter, the inverter comprising a first transistor having p-type conductivity and a second transistor having an n-type conductivity;

a third transistor; and

a fourth transistor,

wherein a gate of the first transistor is electrically connected to a gate of the second transistor,

wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor,

wherein one of a source and a drain of the third transistor is electrically connected to the other of the source and the drain of the first transistor,

wherein the other of the source and the drain of the third transistor is electrically connected to a wiring having a function of supplying first potential,

wherein a gate of the third transistor is electrically connected to a gate of the fourth transistor,

wherein one of a source and a drain of the fourth transistor is electrically connected to the other of the source and the drain of the second transistor,

wherein the other of the source and the drain of the fourth transistor is electrically connected to a wiring having a function of supplying second potential lower than the first potential, and

wherein at least two of the first transistor, the second transistor, the third transistor, and the fourth transistor comprise an oxide semiconductor.

15. The semiconductor device according to claim 14,

wherein the first transistor and the second transistor are provided over a substrate or in the substrate, and

wherein the third transistor and the fourth transistor are provided over the first transistor and the second transistor.

16. The semiconductor device according to claim 14, wherein the oxide semiconductor is an In—

Ga—

Zn-based oxide semiconductor or an In—

Sn—

Zn-based oxide semiconductor.