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Semiconductor device including gate and conductor electrodes

  • US 8,791,529 B2
  • Filed: 04/02/2013
  • Issued: 07/29/2014
  • Est. Priority Date: 02/05/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor layer comprising an offset region;

    a first conductor electrode and a second conductor electrode over and in contact with one surface of the semiconductor layer; and

    a gate over the semiconductor layer,wherein the offset region is provided in at least one of a region between the first conductor electrode and the gate and a region between the second conductor electrode and the gate,wherein the offset region of the semiconductor layer comprises an oxide semiconductor, andwherein a carrier concentration of the oxide semiconductor is lower than or equal to 1012/cm3.

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