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Fast programming of magnetic random access memory (MRAM)

  • US 8,792,269 B1
  • Filed: 03/15/2013
  • Issued: 07/29/2014
  • Est. Priority Date: 03/15/2013
  • Status: Active Grant
First Claim
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1. A circuit comprising:

  • a first transistor;

    a second transistor coupled to the first transistor and to a word line (WL);

    a magnetoresistive tunnel junction (MTJ) coupled to a selected bit line (BL), the circuit including unselected BLs;

    an access transistor coupled to the WL, the MTJ, and to a selected source line (SL), the circuit having unselected SLs and operable to,activate the first transistor and the selected SL thereby causing the second transistor to be deactivated and further causing the voltage at the WL to be raised from substantially 0 volts to a voltage Vdd that is greater than 0 volts,raise the voltage of the unselected BLs and the unselected SLs to Vdd,deactivate the first transistor thereby causing the WL to float and to subsequently have a voltage that is the sum of Vdd and Vx (Vddx), Vx being a voltage that is greater than 0 volts and less than Vdd,program the MTJ while the WL is at the voltage Vddx.

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