Fast programming of magnetic random access memory (MRAM)

• US 8,792,269 B1
• Filed: 03/15/2013
• Issued: 07/29/2014
• Est. Priority Date: 03/15/2013
• Status: Active Grant

• Current Assignee: Avalanche Technology Incorporated
• Original Assignee: Avalanche Technology Incorporated
• Inventors: Abedifard, Ebrahim, Keshtbod, Parviz
• Primary Examiner(s): Byrne, Harry W
• Application Number:
  US13/842,747
• Time in Patent Office: 501 Days
• Field of Search: 365/48, 365/55, 365/62, 365/66, 365/74, 365/78, 365 80- 93, 365/100, 365/130, 365/131, 365/148, 365/158, 365171-173, 365/209, 365/213, 365/225.5, 365/230.07, 365/232, 365/243.5, 216/22, 257/295, 257/421, 257/E21.665, 438/3, 428810-816, 428817-8251, 428/826, 977933-935
• US Class Current: 365/158
• CPC Class Codes: G11C 11/1653 Address circuits or decoders
• CPC Class Codes: G11C 11/1659 Cell access
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: G11C 8/08 Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Abstract

A method of programming a MTJ includes selecting a MTJ that is coupled to an access transistor at the drain of the access transistor. The gate of the access transistor is coupled to a selected word line (WL), the selected WL is substantially at a first voltage, Vdd; whereas the WLs that are not coupled to the MTJ are left to float. A second voltage, Vx, is applied to the unselected bit lines (BLs) and further applied to a source line (SL), the SL being coupled to the source of the access transistor. A third voltage, Vdd or 0 Volts, is applied to a selected BL, the selected BL is coupled the MTJ. The first voltage is applied to a SL, the SL is coupled to the source of the access transistor thereby causing the WL to boot above the first voltage.

Claims

1. A circuit comprising:

a first transistor;

a second transistor coupled to the first transistor and to a word line (WL);

a magnetoresistive tunnel junction (MTJ) coupled to a selected bit line (BL), the circuit including unselected BLs;

an access transistor coupled to the WL, the MTJ, and to a selected source line (SL), the circuit having unselected SLs and operable to,

activate the first transistor and the selected SL thereby causing the second transistor to be deactivated and further causing the voltage at the WL to be raised from substantially 0 volts to a voltage Vdd that is greater than 0 volts,

raise the voltage of the unselected BLs and the unselected SLs to Vdd,

deactivate the first transistor thereby causing the WL to float and to subsequently have a voltage that is the sum of Vdd and Vx (Vddx), Vx being a voltage that is greater than 0 volts and less than Vdd,

program the MTJ while the WL is at the voltage Vddx.

2. The circuit, as recited in claim 1, wherein the first transistor has a source and the at the source of the first transistor is the voltage Vddx.

3. The circuit, as recited in claim 1, wherein the second transistor has a drain and the drain of the second transistor is coupled to ground.

4. The circuit, as recited in claim 1, wherein each of the first and second transistors has a gate and the first transistor is activated when the gate of the first transistor is at logic state ‘

0’

.

5. The circuit, as recited in claim 1, wherein each of the first and second transistors has a gate and the second transistor is deactivated when the gate of the second transistor is at logic state ‘

0’

.