Core wire holder for producing polycrystalline silicon and method for producing polycrystalline silicon

• US 8,793,853 B2
• Filed: 07/27/2010
• Issued: 08/05/2014
• Est. Priority Date: 10/14/2009
• Status: Active Grant

• Current Assignee: Shin-Etsu Chemical Company Limited
• Original Assignee: Shin-Etsu Chemical Company Limited
• Application Number:
  US13/502,015
• Publication Number:
  US 20120201976A1
• Time in Patent Office: 1,470 Days
• Field of Search: 269/903, 269/900, 269/21, 269/20, 292/811
• US Class Current: 29/281.1
• CPC Class Codes: C01B 33/035 by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
• CPC Class Codes: Y10T 29/53796 Puller or pusher means, contained force multiplying operator
• CPC Class Codes: Y10T 29/53961 with work-holder for assembly

Abstract

One end side of a core wire holder 20 is formed into a shape of a truncated cone and has an inclined surface. In the end portion, an opening 22 is provided, and a hollow portion 21 is formed, a silicon core wire 5 being inserted into the hollow portion 21 and held therein. On the surface of the silicon core wire 5, polycrystalline silicon 6 is vapor deposited by the Siemens method to produce a polycrystalline silicon rod. On the inclined surface of the truncated cone portion in the vicinity of the opening 22, as a thermal insulating layer, annular slits 23a to 23c are formed from an outer circumferential surface in the vicinity of the opening toward the hollow portion 21. The annular slit acts as a thermal insulating portion, and suppresses escape of the heat to heat the one end side of the core wire holder 20.

Claims

1. A core wire holder, comprising:

a thermal insulating portion provided between one end and the other end of the core wire holder, wherein an opening of a hollow portion into which a silicon core wire can be inserted is provided in the one end, and the other end is a contact portion with a metal electrode for flowing a current to the silicon core wire, wherein the core wire holder is a carbon electrode made of graphite.

2. The core wire holder according to claim 1, wherein the thermal insulating portion comprises at least one annular slit formed from an outer circumferential surface near the opening of the hollow portion.

3. The core wire holder according to claim 2, wherein a depth of said at least one annular slit is not less than 70% and less than 100% of a thickness of the core wire holder in a region in which said at least one annular slit is formed.

4. The core wire holder according to claim 2, wherein a depth of said at least one annular slit is not less than 90% and less than 100% of a thickness of the core wire holder in a region in which said at least one annular slit is formed.

5. The core wire holder according to claim 2, wherein a distance between an inner circumferential surface of said at least one annular slit and an outer circumferential surface of the silicon core wire is not less than 0.1 mm.

6. The core wire holder according to claim 2, wherein a width of said at least one annular slit is not less than 0.5 mm.

7. The core wire holder according to claim 2, wherein the one end is formed into a shape of a truncated cone, and said at least one annular slit is formed on an inclined surface of the truncated cone.

8. The core wire holder according to claim 2, wherein said at least one annular slit is filled with an insulating material having a thermal conductivity less than that of the core wire holder.

9. The core wire holder according to claim 1, wherein a thermal conductivity of the core wire holder is not more than 145 W/m·

K.

10. The core wire holder according to claim 2, wherein a thermal conductivity of the core wire holder is not more than 145 W/m·

K.

11. The core wire holder according to claim 3, wherein a distance between an inner circumferential surface of said at least one annular slit and an outer circumferential surface of the silicon core wire is not less than 0.1 mm.

12. The core wire holder according to claim 4, wherein a distance between an inner circumferential surface of said at least one annular slit and an outer circumferential surface of the silicon core wire is not less than 0.1 mm.

13. The core wire holder according to claim 11, wherein a width of said at least one annular slit is not less than 0.5 mm.

14. The core wire holder according to claim 12, wherein a width of said at least one annular slit is not less than 0.5 mm.

15. The core wire holder according to claim 13, wherein the one end side is formed into a shape of a truncated cone, and said at least one annular slit is formed on an inclined surface of the truncated cone.

16. The core wire holder according to claim 14, wherein the one end side is formed into a shape of a truncated cone, and said at least one annular slit is formed on an inclined surface of the truncated cone.

17. The core wire holder according to claim 10, wherein said at least one annular slit is filled with an insulating material having a thermal conductivity less than that of the core wire holder.