Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD)
First Claim
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1. A III-nitride crystal, comprising:
- a top surface having an area of least 5 micrometers by 5 micrometers, wherein;
the top surface has a non-polar m-plane orientation, anda surface roughness of the top surface, as grown, is not more than 2.54 nanometers at least for the area of 5 micrometers by 5 micrometers, andthe III-nitride crystal has a crystalline quality characterized by an off-axis rocking curve having an off-axis full width at half maximum (FWHM) of no more than 0.38°
, as measured by X-ray diffraction.
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Abstract
A method of growing non-polar m-plane III-nitride film, such as GaN, AlN, AlGaN or InGaN, wherein the non-polar m-plane III-nitride film is grown on a suitable substrate, such as an m-SiC, m-GaN, LiGaO2 or LiAlO2 substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer, such as aluminum nitride (AlN), on the annealed substrate, and growing the non-polar m-plane III-nitride film on the nucleation layer using MOCVD.
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Citations
31 Claims
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1. A III-nitride crystal, comprising:
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a top surface having an area of least 5 micrometers by 5 micrometers, wherein; the top surface has a non-polar m-plane orientation, and a surface roughness of the top surface, as grown, is not more than 2.54 nanometers at least for the area of 5 micrometers by 5 micrometers, and the III-nitride crystal has a crystalline quality characterized by an off-axis rocking curve having an off-axis full width at half maximum (FWHM) of no more than 0.38°
, as measured by X-ray diffraction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A device structure, comprising:
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a non-polar m-plane III-nitride crystal, wherein; the non-polar m-plane III-nitride crystal is grown on a surface of a substrate, a subsequent non-polar m-plane III-nitride layer is grown on a top surface of the non-polar m-plane III-nitride crystal, the top surface includes an area with a root mean square surface roughness of not more than 2.54 nanometers at least for an area of 5 micrometers by 5 micrometers, and the III-nitride crystal has a crystalline quality characterized by an off-axis rocking curve having an off-axis full width at half maximum (FWHM) of no more than 0.38°
, as measured by X-ray diffraction.
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23. A method for growing an III-nitride crystal, comprising:
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growing a top surface of a III-nitride crystal using growth conditions, wherein; the top surface has an area of least 5 micrometers by 5 micrometers, the top surface has a non-polar m-plane orientation, a surface roughness of the top surface, as grown, is not more than 2.54 nanometers at least for the area of 5 micrometers by 5 micrometers, the III-nitride crystal has a crystalline quality characterized by an off-axis rocking curve having an off-axis full width at half maximum (FWHM) of no more than 0.38°
, as measured by X-ray diffraction. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31)
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Specification